Paper Abstract and Keywords |
Presentation |
2012-04-28 11:30
Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus) SDM2012-17 OME2012-17 Link to ES Tech. Rep. Archives: SDM2012-17 OME2012-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
SiO2 and SiN films of 100 nm thickness were deposited on the Si substrate by RF sputtering. After thermal annealing, at 800℃, the leak current of SiO2 film was prominently reduced from 5.0×10-8 down to 3.5×10-10 A/cm2 at -5V. The leak current of SiN film was prominently reduced from 1.4×10-8 down to 5.8×10-10 A/cm2 at -5V. This result suggests that the quality of SiO2 and SiN film was effectively improved by thermal annealing. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Sputtering / TFT / SiO2 / SiN / Gate insulator / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 18, SDM2012-17, pp. 75-77, April 2012. |
Paper # |
SDM2012-17 |
Date of Issue |
2012-04-20 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-17 OME2012-17 Link to ES Tech. Rep. Archives: SDM2012-17 OME2012-17 |
Conference Information |
Committee |
SDM OME |
Conference Date |
2012-04-27 - 2012-04-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-04-SDM-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering |
Sub Title (in English) |
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Keyword(1) |
Sputtering |
Keyword(2) |
TFT |
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SiO2 |
Keyword(4) |
SiN |
Keyword(5) |
Gate insulator |
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1st Author's Name |
Keisuke Yagi |
1st Author's Affiliation |
University of the Ryukyus (Univ.Ryukyus) |
2nd Author's Name |
Tatsuya Okada |
2nd Author's Affiliation |
University of the Ryukyus (Univ.Ryukyus) |
3rd Author's Name |
Takashi Noguchi |
3rd Author's Affiliation |
University of the Ryukyus (Univ.Ryukyus) |
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Speaker |
Author-1 |
Date Time |
2012-04-28 11:30:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2012-17, OME2012-17 |
Volume (vol) |
vol.112 |
Number (no) |
no.18(SDM), no.19(OME) |
Page |
pp.75-77 |
#Pages |
3 |
Date of Issue |
2012-04-20 (SDM, OME) |
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