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Paper Abstract and Keywords
Presentation 2012-04-27 16:50
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9 Link to ES Tech. Rep. Archives: SDM2012-9 OME2012-9
Abstract (in Japanese) (See Japanese page) 
(in English) A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size of more than 2 μm, were fabricated on a glass substrate at 550C. The nominal field-effect mobility of the n-channel TFT is 530 cm2/Vs and its subthreshold slope is 140 mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes.
Keyword (in Japanese) (See Japanese page) 
(in English) double-gate / poly-Si / TFT / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 18, SDM2012-9, pp. 41-44, April 2012.
Paper # SDM2012-9 
Date of Issue 2012-04-20 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-9 OME2012-9 Link to ES Tech. Rep. Archives: SDM2012-9 OME2012-9

Conference Information
Committee SDM OME  
Conference Date 2012-04-27 - 2012-04-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2012-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate 
Sub Title (in English)  
Keyword(1) double-gate  
Keyword(2) poly-Si  
Keyword(3) TFT  
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1st Author's Name Hiroyuki Ogata  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Kenji Ichijo  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
3rd Author's Name Kenji Kondo  
3rd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
4th Author's Name Yasunori Okabe  
4th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
5th Author's Name Yusuke Shika  
5th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
6th Author's Name Shinya Kamo  
6th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
7th Author's Name Akito Hara  
7th Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker Author-1 
Date Time 2012-04-27 16:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2012-9, OME2012-9 
Volume (vol) vol.112 
Number (no) no.18(SDM), no.19(OME) 
Page pp.41-44 
#Pages
Date of Issue 2012-04-20 (SDM, OME) 


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