Paper Abstract and Keywords |
Presentation |
2012-04-27 16:50
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.) SDM2012-9 OME2012-9 Link to ES Tech. Rep. Archives: SDM2012-9 OME2012-9 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A multigate polycrystalline-silicon (poly-Si) thin-film transistor (TFT) is one of the recent topics in the field of Si devices. In this study, self-aligned planar metal double-gate poly-Si TFTs consisting of an embedded bottom metal gate, top metal gate fabricated by a self-alignment process, and a lateral poly-Si film with a grain size of more than 2 μm, were fabricated on a glass substrate at 550C. The nominal field-effect mobility of the n-channel TFT is 530 cm2/Vs and its subthreshold slope is 140 mV/dec. The performance of the proposed TFTs is superior to that of top-gate TFTs fabricated using equivalent processes. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
double-gate / poly-Si / TFT / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 18, SDM2012-9, pp. 41-44, April 2012. |
Paper # |
SDM2012-9 |
Date of Issue |
2012-04-20 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2012-9 OME2012-9 Link to ES Tech. Rep. Archives: SDM2012-9 OME2012-9 |
Conference Information |
Committee |
SDM OME |
Conference Date |
2012-04-27 - 2012-04-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-04-SDM-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate |
Sub Title (in English) |
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Keyword(1) |
double-gate |
Keyword(2) |
poly-Si |
Keyword(3) |
TFT |
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1st Author's Name |
Hiroyuki Ogata |
1st Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
2nd Author's Name |
Kenji Ichijo |
2nd Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
3rd Author's Name |
Kenji Kondo |
3rd Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
4th Author's Name |
Yasunori Okabe |
4th Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
5th Author's Name |
Yusuke Shika |
5th Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
6th Author's Name |
Shinya Kamo |
6th Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
7th Author's Name |
Akito Hara |
7th Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-04-27 16:50:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2012-9, OME2012-9 |
Volume (vol) |
vol.112 |
Number (no) |
no.18(SDM), no.19(OME) |
Page |
pp.41-44 |
#Pages |
4 |
Date of Issue |
2012-04-20 (SDM, OME) |
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