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Paper Abstract and Keywords
Presentation 2012-04-19 10:15
Effects of interfacial oxide layer of P3HT/n-Si organic/inorganic heterojunction diode on carrier transport properties
Naoki Oyama, Sho Kaneko, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) ED2012-14 Link to ES Tech. Rep. Archives: ED2012-14
Abstract (in Japanese) (See Japanese page) 
(in English) Current density–voltage (J-V) characteristics of P3HT/n-silicon heterojunction were investigated to evaluate electrical characteristics of the organic/inorganic heterojunction diodes. The diodes were fabricated by P3HT spin coating processes with surface treatments of SiC and HF treatments. The forward current density was enhanced by the treatments. The thicknesses of oxide layer between the P3HT film and the n-Si substrate strongly depends on the treatments. Effects of interfacial oxide layer of these heterojunction diodes on carrier transport properties were discussed with Card model.
Keyword (in Japanese) (See Japanese page) 
(in English) flexible device / heterojunction / Schottky diode / poly(3-hexylthiophene) / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 5, ED2012-14, pp. 59-64, April 2012.
Paper # ED2012-14 
Date of Issue 2012-04-11 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-14 Link to ES Tech. Rep. Archives: ED2012-14

Conference Information
Committee ED  
Conference Date 2012-04-18 - 2012-04-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Yamagata University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT(organic matters, oxides), others 
Paper Information
Registration To ED 
Conference Code 2012-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of interfacial oxide layer of P3HT/n-Si organic/inorganic heterojunction diode on carrier transport properties 
Sub Title (in English)  
Keyword(1) flexible device  
Keyword(2) heterojunction  
Keyword(3) Schottky diode  
Keyword(4) poly(3-hexylthiophene)  
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1st Author's Name Naoki Oyama  
1st Author's Affiliation Yamagata University (Yamagata Univ.)
2nd Author's Name Sho Kaneko  
2nd Author's Affiliation Yamagata University (Yamagata Univ.)
3rd Author's Name Kensaku Kanomata  
3rd Author's Affiliation Yamagata University (Yamagata Univ.)
4th Author's Name Fumihiko Hirose  
4th Author's Affiliation Yamagata University (Yamagata Univ.)
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Speaker Author-1 
Date Time 2012-04-19 10:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-14 
Volume (vol) vol.112 
Number (no) no.5 
Page pp.59-64 
#Pages
Date of Issue 2012-04-11 (ED) 


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