Paper Abstract and Keywords |
Presentation |
2012-04-19 10:15
Effects of interfacial oxide layer of P3HT/n-Si organic/inorganic heterojunction diode on carrier transport properties Naoki Oyama, Sho Kaneko, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) ED2012-14 Link to ES Tech. Rep. Archives: ED2012-14 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Current density–voltage (J-V) characteristics of P3HT/n-silicon heterojunction were investigated to evaluate electrical characteristics of the organic/inorganic heterojunction diodes. The diodes were fabricated by P3HT spin coating processes with surface treatments of SiC and HF treatments. The forward current density was enhanced by the treatments. The thicknesses of oxide layer between the P3HT film and the n-Si substrate strongly depends on the treatments. Effects of interfacial oxide layer of these heterojunction diodes on carrier transport properties were discussed with Card model. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
flexible device / heterojunction / Schottky diode / poly(3-hexylthiophene) / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 5, ED2012-14, pp. 59-64, April 2012. |
Paper # |
ED2012-14 |
Date of Issue |
2012-04-11 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2012-14 Link to ES Tech. Rep. Archives: ED2012-14 |
Conference Information |
Committee |
ED |
Conference Date |
2012-04-18 - 2012-04-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Yamagata University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
TFT(organic matters, oxides), others |
Paper Information |
Registration To |
ED |
Conference Code |
2012-04-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effects of interfacial oxide layer of P3HT/n-Si organic/inorganic heterojunction diode on carrier transport properties |
Sub Title (in English) |
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Keyword(1) |
flexible device |
Keyword(2) |
heterojunction |
Keyword(3) |
Schottky diode |
Keyword(4) |
poly(3-hexylthiophene) |
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1st Author's Name |
Naoki Oyama |
1st Author's Affiliation |
Yamagata University (Yamagata Univ.) |
2nd Author's Name |
Sho Kaneko |
2nd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
3rd Author's Name |
Kensaku Kanomata |
3rd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
4th Author's Name |
Fumihiko Hirose |
4th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-04-19 10:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2012-14 |
Volume (vol) |
vol.112 |
Number (no) |
no.5 |
Page |
pp.59-64 |
#Pages |
6 |
Date of Issue |
2012-04-11 (ED) |