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Paper Abstract and Keywords
Presentation 2012-03-05 10:50
Basic Performance of a Logic-IP Compatible eDRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers
Ippei Kume, Naoya Inoue, Ken'ichiro Hijioka, Jun Kawahara, Koichi Takeda, Naoya Furutake, Hiroki Shirai, Kenya Kazama, Shin'ichi Kuwabara, Msasatoshi Watarai, Takashi Sakoh, Toshifumi Takahashi, Takashi Ogura, Toshiji Taiji, Yoshiko Kasama (Renesas Electronics) SDM2011-177 Link to ES Tech. Rep. Archives: SDM2011-177
Abstract (in Japanese) (See Japanese page) 
(in English) We have confirmed the basic performance of a Logic-IP compatible (LIC) eDRAM with cylinder capacitors in the low-k/Cu BEOL layers. The LIC-eDRAM reduces the contact (CT) height, or essentially the RC delays due to the parasitic component to the contact. By circuit simulation, a 28-nm-node LIC-eDRAM with the reduced CT height controls the logic delay with Δτd <5% to that of 28-nm-node standard CMOS logics, enabling us ensure the logic IP compatibility. This was confirmed also by a 40-nm-node LIC-eDRAM test-chip fabricated. The 40-nm-node inverter delays in the test-chip were controlled actually within Δτd < 5%, referred to those of a pure-CMOS logic LSI. Meanwhile the retention time of the DRAM macro was in the range of milliseconds, which has no difference to that of a conventional eDRAM.
Keyword (in Japanese) (See Japanese page) 
(in English) Embedded memory / DRAM / 28nm-node / Logic IP compatible / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 463, SDM2011-177, pp. 7-11, March 2012.
Paper # SDM2011-177 
Date of Issue 2012-02-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-177 Link to ES Tech. Rep. Archives: SDM2011-177

Conference Information
Committee SDM  
Conference Date 2012-03-05 - 2012-03-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wiring and Assembly Technology, etc 
Paper Information
Registration To SDM 
Conference Code 2012-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Basic Performance of a Logic-IP Compatible eDRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers 
Sub Title (in English)  
Keyword(1) Embedded memory  
Keyword(2) DRAM  
Keyword(3) 28nm-node  
Keyword(4) Logic IP compatible  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ippei Kume  
1st Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
2nd Author's Name Naoya Inoue  
2nd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
3rd Author's Name Ken'ichiro Hijioka  
3rd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
4th Author's Name Jun Kawahara  
4th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
5th Author's Name Koichi Takeda  
5th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
6th Author's Name Naoya Furutake  
6th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
7th Author's Name Hiroki Shirai  
7th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
8th Author's Name Kenya Kazama  
8th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
9th Author's Name Shin'ichi Kuwabara  
9th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
10th Author's Name Msasatoshi Watarai  
10th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
11th Author's Name Takashi Sakoh  
11th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
12th Author's Name Toshifumi Takahashi  
12th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
13th Author's Name Takashi Ogura  
13th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
14th Author's Name Toshiji Taiji  
14th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
15th Author's Name Yoshiko Kasama  
15th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics)
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17th Author's Affiliation ()
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Speaker Author-1 
Date Time 2012-03-05 10:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2011-177 
Volume (vol) vol.111 
Number (no) no.463 
Page pp.7-11 
#Pages
Date of Issue 2012-02-27 (SDM) 


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