Paper Abstract and Keywords |
Presentation |
2012-03-05 10:50
Basic Performance of a Logic-IP Compatible eDRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers Ippei Kume, Naoya Inoue, Ken'ichiro Hijioka, Jun Kawahara, Koichi Takeda, Naoya Furutake, Hiroki Shirai, Kenya Kazama, Shin'ichi Kuwabara, Msasatoshi Watarai, Takashi Sakoh, Toshifumi Takahashi, Takashi Ogura, Toshiji Taiji, Yoshiko Kasama (Renesas Electronics) SDM2011-177 Link to ES Tech. Rep. Archives: SDM2011-177 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have confirmed the basic performance of a Logic-IP compatible (LIC) eDRAM with cylinder capacitors in the low-k/Cu BEOL layers. The LIC-eDRAM reduces the contact (CT) height, or essentially the RC delays due to the parasitic component to the contact. By circuit simulation, a 28-nm-node LIC-eDRAM with the reduced CT height controls the logic delay with Δτd <5% to that of 28-nm-node standard CMOS logics, enabling us ensure the logic IP compatibility. This was confirmed also by a 40-nm-node LIC-eDRAM test-chip fabricated. The 40-nm-node inverter delays in the test-chip were controlled actually within Δτd < 5%, referred to those of a pure-CMOS logic LSI. Meanwhile the retention time of the DRAM macro was in the range of milliseconds, which has no difference to that of a conventional eDRAM. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Embedded memory / DRAM / 28nm-node / Logic IP compatible / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 463, SDM2011-177, pp. 7-11, March 2012. |
Paper # |
SDM2011-177 |
Date of Issue |
2012-02-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2011-177 Link to ES Tech. Rep. Archives: SDM2011-177 |
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