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Paper Abstract and Keywords
Presentation 2012-02-08 13:25
Charge distribution near interface of high-k gate insulator in CNFETs
Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173 Link to ES Tech. Rep. Archives: ED2011-156 SDM2011-173
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-effect transistors (CNFETs) by Kelvin probe force microscopy. It has been found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and with a SiO2 substrate. We have also studied the effect of the positive interface charges on the property of CNFETs, using the device simulation. It has been revealed that the charges at the interface of the gate insulator with the Au electrodes is responsible for the change in the polarity of conduction carriers of CNFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) carbon nanotube / ALD / high-k / gate insulator / interface / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 425, ED2011-156, pp. 83-87, Feb. 2012.
Paper # ED2011-156 
Date of Issue 2012-01-31 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-156 SDM2011-173 Link to ES Tech. Rep. Archives: ED2011-156 SDM2011-173

Conference Information
Committee ED SDM  
Conference Date 2012-02-07 - 2012-02-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
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Paper Information
Registration To ED 
Conference Code 2012-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Charge distribution near interface of high-k gate insulator in CNFETs 
Sub Title (in English)  
Keyword(1) carbon nanotube  
Keyword(2) ALD  
Keyword(3) high-k  
Keyword(4) gate insulator  
Keyword(5) interface  
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1st Author's Name Kosuke Suzuki  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Yutaka Ohno  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Shigeru Kishimoto  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Takashi Mizutani  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2012-02-08 13:25:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2011-156,IEICE-SDM2011-173 
Volume (vol) IEICE-111 
Number (no) no.425(ED), no.426(SDM) 
Page pp.83-87 
#Pages IEICE-5 
Date of Issue IEICE-ED-2012-01-31,IEICE-SDM-2012-01-31 


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