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| Presentation | 2012-02-08 13:25 Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)  ED2011-156 SDM2011-173 Link to ES Tech. Rep. Archives: ED2011-156 SDM2011-173 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-effect transistors (CNFETs) by Kelvin probe force microscopy. It has been found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and with a SiO2 substrate. We have also studied the effect of the positive interface charges on the property of CNFETs, using the device simulation. It has been revealed that the charges at the interface of the gate insulator with the Au electrodes is responsible for the change in the polarity of conduction carriers of CNFETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | carbon nanotube / ALD / high-k / gate insulator / interface / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 425, ED2011-156, pp. 83-87, Feb. 2012. | |
| Paper # | ED2011-156 | |
| Date of Issue | 2012-01-31 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-156 SDM2011-173 Link to ES Tech. Rep. Archives: ED2011-156 SDM2011-173 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2012-02-07 - 2012-02-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Charge distribution near interface of high-k gate insulator in CNFETs |
| Sub Title (in English) | |
| Keyword(1) | carbon nanotube |
| Keyword(2) | ALD |
| Keyword(3) | high-k |
| Keyword(4) | gate insulator |
| Keyword(5) | interface |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kosuke Suzuki |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Yutaka Ohno |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Shigeru Kishimoto |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Takashi Mizutani |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2012-02-08 13:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-156, SDM2011-173 |
| Volume (vol) | vol.111 |
| Number (no) | no.425(ED), no.426(SDM) |
| Page | pp.83-87 |
| #Pages | 5 |
| Date of Issue | 2012-01-31 (ED, SDM) |
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