Paper Abstract and Keywords |
Presentation |
2012-01-12 10:10
Study of source charging time in InGaAs MOSFET Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech) ED2011-129 MW2011-152 Link to ES Tech. Rep. Archives: ED2011-129 MW2011-152 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
When ballistic transportation of electrons in the channel of MOSFET is realized by channel shrinkage, drain current is controlled by bottleneck of potential between source and the channel. In this situation, source charging time can be treated by similar manner for emitter charging time of heterojunction bipolar transistors (HBTs). Recently, it was reported that the proportional relationship between emitter charging time and inverse of current density was no more valid when emitter current density became high. In this report, by using InGaAs MOSFET for ballistic transportation of electron, source charging time is discussed based on relationship between current density and current drivability of the source. Linear relationship between the source charging time and inverse of current density has offset in low current density, while the offset is reduced at high current density by increase of injection velocity. As this offset is proportional to square root of effective mass, InGaAs MOSFET with smaller effective mass has smaller source charging time in comparison with Si MOSFET with larger effective mass. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Source charging time / InGaAs MOSFET / ballistic electron / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 373, ED2011-129, pp. 59-62, Jan. 2012. |
Paper # |
ED2011-129 |
Date of Issue |
2012-01-04 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-129 MW2011-152 Link to ES Tech. Rep. Archives: ED2011-129 MW2011-152 |
Conference Information |
Committee |
ED MW |
Conference Date |
2012-01-11 - 2012-01-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg |
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(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2012-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Study of source charging time in InGaAs MOSFET |
Sub Title (in English) |
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Source charging time |
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InGaAs MOSFET |
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ballistic electron |
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1st Author's Name |
Yasuyuki Miyamoto |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
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Masayuki Yamada |
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Tokyo Institute of Technology (Tokyo Tech) |
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Ken Uchida |
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Tokyo Institute of Technology (Tokyo Tech) |
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Speaker |
Author-1 |
Date Time |
2012-01-12 10:10:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2011-129, MW2011-152 |
Volume (vol) |
vol.111 |
Number (no) |
no.373(ED), no.374(MW) |
Page |
pp.59-62 |
#Pages |
4 |
Date of Issue |
2012-01-04 (ED, MW) |
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