Paper Abstract and Keywords |
Presentation |
2012-01-12 13:40
High temperature device characteristics of AlGaN-Channel HEMTs Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158 Link to ES Tech. Rep. Archives: ED2011-135 MW2011-158 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at temperatures between 25 and 300 degree C. Decrease ratio of saturation drain current was small with increasing an Al composition of AlGaN channel. Delay time analyses suggested that the temperature dependence of the Al0.26Ga0.74N -channel HEMT was primarily dominated by the effective electron velocity in the channel. These results indicate that AlGaN-channel HEMTs grown on an AlN substrate is promising for high-temperature electronics applications at more than 300 ºC. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN channel / HEMT / high-temperature operation / RF characteristics / effective electron velocity / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 373, ED2011-135, pp. 91-95, Jan. 2012. |
Paper # |
ED2011-135 |
Date of Issue |
2012-01-04 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-135 MW2011-158 Link to ES Tech. Rep. Archives: ED2011-135 MW2011-158 |
|