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Paper Abstract and Keywords
Presentation 2012-01-12 13:40
High temperature device characteristics of AlGaN-Channel HEMTs
Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158 Link to ES Tech. Rep. Archives: ED2011-135 MW2011-158
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at temperatures between 25 and 300 degree C. Decrease ratio of saturation drain current was small with increasing an Al composition of AlGaN channel. Delay time analyses suggested that the temperature dependence of the Al0.26Ga0.74N -channel HEMT was primarily dominated by the effective electron velocity in the channel. These results indicate that AlGaN-channel HEMTs grown on an AlN substrate is promising for high-temperature electronics applications at more than 300 ºC.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN channel / HEMT / high-temperature operation / RF characteristics / effective electron velocity / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 373, ED2011-135, pp. 91-95, Jan. 2012.
Paper # ED2011-135 
Date of Issue 2012-01-04 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-135 MW2011-158 Link to ES Tech. Rep. Archives: ED2011-135 MW2011-158

Conference Information
Committee ED MW  
Conference Date 2012-01-11 - 2012-01-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High temperature device characteristics of AlGaN-Channel HEMTs 
Sub Title (in English)  
Keyword(1) AlGaN channel  
Keyword(2) HEMT  
Keyword(3) high-temperature operation  
Keyword(4) RF characteristics  
Keyword(5) effective electron velocity  
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Keyword(8)  
1st Author's Name Maiko Hatano  
1st Author's Affiliation Fukui University (Fukui Univ.)
2nd Author's Name Jyun Yamazaki  
2nd Author's Affiliation Fukui University (Fukui Univ.)
3rd Author's Name Norimasa Yafune  
3rd Author's Affiliation Sharp Corporation (Sharp)
4th Author's Name Hirokuni Tokuda  
4th Author's Affiliation Fukui University (Fukui Univ.)
5th Author's Name Yoshiyuki Yamamoto  
5th Author's Affiliation Sumitomo Electric Industries, Ltd (Sumitomo Electric Industries)
6th Author's Name Shin Hashimoto  
6th Author's Affiliation Sumitomo Electric Industries, Ltd (Sumitomo Electric Industries)
7th Author's Name Katsushi Akita  
7th Author's Affiliation Sumitomo Electric Industries, Ltd (Sumitomo Electric Industries)
8th Author's Name Masaaki Kuzuhara  
8th Author's Affiliation Fukui University (Fukui Univ.)
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Speaker Author-1 
Date Time 2012-01-12 13:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-135, MW2011-158 
Volume (vol) vol.111 
Number (no) no.373(ED), no.374(MW) 
Page pp.91-95 
#Pages
Date of Issue 2012-01-04 (ED, MW) 


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