Paper Abstract and Keywords |
Presentation |
2011-12-21 15:30
Low Operation Voltage Organic Transistors on Shape-Memory Film with Planarization Yu Kato (Univ. of Tokyo), Tsuyoshi Sekitani (Univ. of Tokyo/JST), Tomoyuki Yokota, Kazunori Kuribara (Univ. of Tokyo), Ute Zschieschang, Hagen Klauk (Max Planck Inst.), Tatsuya Yamamoto, Kazuo Takimiya (Hiroshima Univ.), Masaaki Ikeda, Hirokazu Kuwabara (Nippon Kayaku), Takao Someya (Univ. of Tokyo/JST) OME2011-70 Link to ES Tech. Rep. Archives: OME2011-70 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated low operation voltage organic transistors on shape-memory film which memorizes its shape by applying heat more than 150ºC and can be applied to elastic circuits. Although this film had a problem of rough surface with RMS roughness of as large as 190 nm, we obtained p-type organic transistors with mobility of 0.51 cm^2/Vs and organic CMOS inverters with gain of 92 by forming a polyimide planarization layer. Furthermore, we obtained p-type transistors with mobility of 1.8 cm^2/Vs by adding a parylene planarization layer and using anodization process of gate electrodes. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Organic transistor / CMOS inverter / Self-Assembled Monolayer(SAM) / Planarization / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 369, OME2011-70, pp. 23-28, Dec. 2011. |
Paper # |
OME2011-70 |
Date of Issue |
2011-12-14 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Notes on Review |
This article is a technical report without peer review, and its polished version will be published elsewhere. |
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OME2011-70 Link to ES Tech. Rep. Archives: OME2011-70 |
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