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| Presentation | 2011-12-16 16:40 Charge Retentivity of DNAFET Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Shin Yokoyama (Hiroshima Univ)  SDM2011-147 Link to ES Tech. Rep. Archives: SDM2011-147 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The charge retention characteristics of the DNA molecules which are fabricated and bridged between the source/drain electrodes with 100nm-gap using the SOI substrates were examined. The drain current increase of the DNA FET was observed at every measurement of Id-Vd characteristics. We inferred the reason of this phenomenon as follows. The hole current emitted from the n+ drain electrode increases due to the trap of electron at the DNA molecules. However, the electron which energy becomes larger than the Fermi energy is detraped from the DNA molecules by the negative gate voltage application. Thus, the Id-Vd characteristics of the DNA FET were recovered. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | DNA / FET / Si / Trap / Detrap / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 357, SDM2011-147, pp. 83-85, Dec. 2011. | |
| Paper # | SDM2011-147 | |
| Date of Issue | 2011-12-09 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-147 Link to ES Tech. Rep. Archives: SDM2011-147 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-12-16 - 2011-12-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Evaluation of Silicon related Materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Charge Retentivity of DNAFET |
| Sub Title (in English) | |
| Keyword(1) | DNA |
| Keyword(2) | FET |
| Keyword(3) | Si |
| Keyword(4) | Trap |
| Keyword(5) | Detrap |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shogo Takagi |
| 1st Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 2nd Author's Name | Naoto Matsuo |
| 2nd Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 3rd Author's Name | Kazushige Yamana |
| 3rd Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 4th Author's Name | Akira Heya |
| 4th Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 5th Author's Name | Tadao Takada |
| 5th Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 6th Author's Name | Shin Yokoyama |
| 6th Author's Affiliation | University of Hyogo (Hiroshima Univ) |
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| Speaker | Author-1 |
| Date Time | 2011-12-16 16:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-147 |
| Volume (vol) | vol.111 |
| Number (no) | no.357 |
| Page | pp.83-85 |
| #Pages | 3 |
| Date of Issue | 2011-12-09 (SDM) |
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