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Paper Abstract and Keywords
Presentation 2011-12-16 14:50
Multiple-Bit-Upset and Single-Bit-Upset Resilient 8T SRAM Bitcell Layout with Divided Wordline Structure
Yohei Umeki, Shusuke Yoshimoto, Takurou Amashita, Hiroshi Kawaguchi (Kobe Univ.), Masahiko Yoshimoto (Kobe Univ./JST) ICD2011-134 Link to ES Tech. Rep. Archives: ICD2011-134
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a new 8T (8-transistor) SRAM cell layout mitigating multiple-bit upset (MBU) in a divided wordline structure. Because bitlines along unselected columns are not activated, the divided wordline structure eliminates a half-select problem and achieves low-power operation, which is often preferred for low-power / low-voltage applications. However, the conventional 8T SRAM with the divided wordline structure engenders MBUs because all bits in the same word are physically adjoining. Consequently, error correction coding (ECC) techniques are difficult to apply. This paper presents a new 8T cell layout pattern that separates internal latches in SRAM cells using both an n-well and a p-substrate. We investigated an SEU cross section of nMOS that is 3.5–4.5 times higher than that of pMOS. Using an iRoC TFIT simulator, we confirmed that the proposed 8T cell has better neutron-induced MBU tolerance. The MBU in the proposed 8T SRAM is improved by 90.70% and the MBU soft error rate (SER) is decreased to 3.46 FIT at 0.9 V when ECC is implemented. Additionally, we conducted Synopsys 3-D TCAD simulation, which indicates that the LET threshold (LETth) in single-event upset (SEU) is also improved by 66.47% in the proposed 8T SRAM by a common-mode effect.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / soft error / multiple-bit upset / single-event upset / error correction coding / alpha particle / neutron particle /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 352, ICD2011-134, pp. 161-166, Dec. 2011.
Paper # ICD2011-134 
Date of Issue 2011-12-08 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2011-134 Link to ES Tech. Rep. Archives: ICD2011-134

Conference Information
Committee ICD  
Conference Date 2011-12-15 - 2011-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To ICD 
Conference Code 2011-12-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Multiple-Bit-Upset and Single-Bit-Upset Resilient 8T SRAM Bitcell Layout with Divided Wordline Structure 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) soft error  
Keyword(3) multiple-bit upset  
Keyword(4) single-event upset  
Keyword(5) error correction coding  
Keyword(6) alpha particle  
Keyword(7) neutron particle  
Keyword(8)  
1st Author's Name Yohei Umeki  
1st Author's Affiliation Kobe University (Kobe Univ.)
2nd Author's Name Shusuke Yoshimoto  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Takurou Amashita  
3rd Author's Affiliation Kobe University (Kobe Univ.)
4th Author's Name Hiroshi Kawaguchi  
4th Author's Affiliation Kobe University (Kobe Univ.)
5th Author's Name Masahiko Yoshimoto  
5th Author's Affiliation Kobe University/JST CREST (Kobe Univ./JST)
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Speaker Author-1 
Date Time 2011-12-16 14:50:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2011-134 
Volume (vol) vol.111 
Number (no) no.352 
Page pp.161-166 
#Pages
Date of Issue 2011-12-08 (ICD) 


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