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Paper Abstract and Keywords
Presentation 2011-12-16 11:20
Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) SDM2011-136 Link to ES Tech. Rep. Archives: SDM2011-136
Abstract (in Japanese) (See Japanese page) 
(in English) To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply DCTS (Discharge Current Transient Spectroscopy) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode. However, these transient currents consisted of currents not only in the bulk, but also on the surface of the diode. Therefore, the diode was fabricated with the treatment of sacrificial oxidation. As a result, sacrificial oxidation could dramatically reduce the surface currents of diodes in high-purity semi-insulating 4H-SiC. Using this diode, transient reverse currents measured from 313 K to 428 K were analyzed by DCTS, and six types of intrinsic defects are detected in sacrificial-oxidized high-purity semi-insulating 4H-SiC. From the temperature dependence of the emission rate of each intrinsic defect, its activation energy and capture cross section are determined.
Keyword (in Japanese) (See Japanese page) 
(in English) Discharge Current Transient Spectroscopy / high-purity semi-insulating 4H-SiC / sacrificial oxidation / intrinsic defect / activation energy / capture cross section / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 357, SDM2011-136, pp. 23-28, Dec. 2011.
Paper # SDM2011-136 
Date of Issue 2011-12-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-136 Link to ES Tech. Rep. Archives: SDM2011-136

Conference Information
Committee SDM  
Conference Date 2011-12-16 - 2011-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon related Materials 
Paper Information
Registration To SDM 
Conference Code 2011-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy 
Sub Title (in English)  
Keyword(1) Discharge Current Transient Spectroscopy  
Keyword(2) high-purity semi-insulating 4H-SiC  
Keyword(3) sacrificial oxidation  
Keyword(4) intrinsic defect  
Keyword(5) activation energy  
Keyword(6) capture cross section  
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Keyword(8)  
1st Author's Name Seiji Nishikawa  
1st Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication univ.)
2nd Author's Name Ryota Okada  
2nd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication univ.)
3rd Author's Name Hideharu Matsuura  
3rd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication univ.)
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Speaker Author-1 
Date Time 2011-12-16 11:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-136 
Volume (vol) vol.111 
Number (no) no.357 
Page pp.23-28 
#Pages
Date of Issue 2011-12-09 (SDM) 


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