Paper Abstract and Keywords |
Presentation |
2011-12-16 11:20
Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) SDM2011-136 Link to ES Tech. Rep. Archives: SDM2011-136 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply DCTS (Discharge Current Transient Spectroscopy) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode. However, these transient currents consisted of currents not only in the bulk, but also on the surface of the diode. Therefore, the diode was fabricated with the treatment of sacrificial oxidation. As a result, sacrificial oxidation could dramatically reduce the surface currents of diodes in high-purity semi-insulating 4H-SiC. Using this diode, transient reverse currents measured from 313 K to 428 K were analyzed by DCTS, and six types of intrinsic defects are detected in sacrificial-oxidized high-purity semi-insulating 4H-SiC. From the temperature dependence of the emission rate of each intrinsic defect, its activation energy and capture cross section are determined. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Discharge Current Transient Spectroscopy / high-purity semi-insulating 4H-SiC / sacrificial oxidation / intrinsic defect / activation energy / capture cross section / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 357, SDM2011-136, pp. 23-28, Dec. 2011. |
Paper # |
SDM2011-136 |
Date of Issue |
2011-12-09 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2011-136 Link to ES Tech. Rep. Archives: SDM2011-136 |
Conference Information |
Committee |
SDM |
Conference Date |
2011-12-16 - 2011-12-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
NAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Evaluation of Silicon related Materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2011-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy |
Sub Title (in English) |
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Keyword(1) |
Discharge Current Transient Spectroscopy |
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high-purity semi-insulating 4H-SiC |
Keyword(3) |
sacrificial oxidation |
Keyword(4) |
intrinsic defect |
Keyword(5) |
activation energy |
Keyword(6) |
capture cross section |
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1st Author's Name |
Seiji Nishikawa |
1st Author's Affiliation |
Osaka Electro-Communication University (Osaka Electro-Communication univ.) |
2nd Author's Name |
Ryota Okada |
2nd Author's Affiliation |
Osaka Electro-Communication University (Osaka Electro-Communication univ.) |
3rd Author's Name |
Hideharu Matsuura |
3rd Author's Affiliation |
Osaka Electro-Communication University (Osaka Electro-Communication univ.) |
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Speaker |
Author-1 |
Date Time |
2011-12-16 11:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2011-136 |
Volume (vol) |
vol.111 |
Number (no) |
no.357 |
Page |
pp.23-28 |
#Pages |
6 |
Date of Issue |
2011-12-09 (SDM) |