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| Presentation | 2011-12-14 14:05 Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers -- Effects of AlGaN barrier thinning -- Masataka Higashiwaki (NICT/JST), Yi Pei, Rongming Chu, Umesh K. Mishra (UCSB)  ED2011-102 Link to ES Tech. Rep. Archives: ED2011-102 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Short-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with extremely thin AlGaN barrier layers were fabricated and characterized from the viewpoint of millimeter-wave applications. The devices showed good DC and RF small-signal characteristics; however, the 30 GHz power characteristics were degraded. The dispersive behavior of the thin-barrier devices measured in pulse {$I$}--{$V$} curves was different from the commonly observed one. We consider from these results that the unique dispersion of the thin-barrier HFETs was caused by the different charging path related to hot electrons accelerated in a high electric field region of a two-dimensional electron gas channel. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / heterostructure field-effect transistor (HFET) / millimeter-wave / frequency dispersion / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 338, ED2011-102, pp. 13-17, Dec. 2011. | |
| Paper # | ED2011-102 | |
| Date of Issue | 2011-12-07 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-102 Link to ES Tech. Rep. Archives: ED2011-102 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2011-12-14 - 2011-12-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Milimeter wave, terahertz device and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers |
| Sub Title (in English) | Effects of AlGaN barrier thinning |
| Keyword(1) | GaN |
| Keyword(2) | heterostructure field-effect transistor (HFET) |
| Keyword(3) | millimeter-wave |
| Keyword(4) | frequency dispersion |
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| 1st Author's Name | Masataka Higashiwaki |
| 1st Author's Affiliation | National Institute of Information and Communications Technology/PRESTO, Japan Science and Technology Agency (NICT/JST) |
| 2nd Author's Name | Yi Pei |
| 2nd Author's Affiliation | University of California, Santa Barbara (UCSB) |
| 3rd Author's Name | Rongming Chu |
| 3rd Author's Affiliation | University of California, Santa Barbara (UCSB) |
| 4th Author's Name | Umesh K. Mishra |
| 4th Author's Affiliation | University of California, Santa Barbara (UCSB) |
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| Speaker | Author-1 |
| Date Time | 2011-12-14 14:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-102 |
| Volume (vol) | vol.111 |
| Number (no) | no.338 |
| Page | pp.13-17 |
| #Pages | 5 |
| Date of Issue | 2011-12-07 (ED) |
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