Paper Abstract and Keywords |
Presentation |
2011-11-18 13:35
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118 Link to ES Tech. Rep. Archives: ED2011-95 CPM2011-144 LQE2011-118 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epitaxial lateral overgrowth (ELO) AlN templates. A 4-um-thick ELO-AlN layer grown in a striped pattern along the <10-10> direction can be coalesced successfully. Low-threading-dislocation-density AlN templates were achieved on Si wafers by a combination of the ELO and NH3 pulsed-flow multilayer growth methods. Single-peaked AlGaN LEDs with wavelengths shorter than 280 nm were achieved by fabricating them on ELO-AlN templates on Si. These low-cost AlGaN-based DUV LEDs on Si substrates are expected to be integrated on the same chips with Si-based electrical circuits. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
DUV LEDs / Si substrates / ELO-AlN templates / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 292, LQE2011-118, pp. 113-116, Nov. 2011. |
Paper # |
LQE2011-118 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2011-95 CPM2011-144 LQE2011-118 Link to ES Tech. Rep. Archives: ED2011-95 CPM2011-144 LQE2011-118 |
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