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Paper Abstract and Keywords
Presentation 2011-11-18 13:35
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118 Link to ES Tech. Rep. Archives: ED2011-95 CPM2011-144 LQE2011-118
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epitaxial lateral overgrowth (ELO) AlN templates. A 4-um-thick ELO-AlN layer grown in a striped pattern along the <10-10> direction can be coalesced successfully. Low-threading-dislocation-density AlN templates were achieved on Si wafers by a combination of the ELO and NH3 pulsed-flow multilayer growth methods. Single-peaked AlGaN LEDs with wavelengths shorter than 280 nm were achieved by fabricating them on ELO-AlN templates on Si. These low-cost AlGaN-based DUV LEDs on Si substrates are expected to be integrated on the same chips with Si-based electrical circuits.
Keyword (in Japanese) (See Japanese page) 
(in English) DUV LEDs / Si substrates / ELO-AlN templates / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 292, LQE2011-118, pp. 113-116, Nov. 2011.
Paper # LQE2011-118 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2011-95 CPM2011-144 LQE2011-118 Link to ES Tech. Rep. Archives: ED2011-95 CPM2011-144 LQE2011-118

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall,Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates 
Sub Title (in English)  
Keyword(1) DUV LEDs  
Keyword(2) Si substrates  
Keyword(3) ELO-AlN templates  
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1st Author's Name Takuya Mino  
1st Author's Affiliation The Institute of Physical and Chemical Research/Panasonic Electric Works (RIKEN/PEW)
2nd Author's Name Hideki Hirayama  
2nd Author's Affiliation The Institute of Physical and Chemical Research (RIKEN)
3rd Author's Name Takayoshi Takano  
3rd Author's Affiliation The Institute of Physical and Chemical Research/Panasonic Electric Works (RIKEN/PEW)
4th Author's Name Kenji Tsubaki  
4th Author's Affiliation The Institute of Physical and Chemical Research/Panasonic Electric Works (RIKEN/PEW)
5th Author's Name Masakazu Sugiyama  
5th Author's Affiliation Tokyo University (Tokyo Univ.)
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Speaker Author-1 
Date Time 2011-11-18 13:35:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2011-95, CPM2011-144, LQE2011-118 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.113-116 
#Pages
Date of Issue 2011-11-10 (ED, CPM, LQE) 


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