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Paper Abstract and Keywords
Presentation 2011-11-18 15:05
Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121 Link to ES Tech. Rep. Archives: ED2011-98 CPM2011-147 LQE2011-121
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at the room temperature; the LED consists of the p-type Ga-rich InGaN cladding layer, In-rich InGaN active layer, and regularly arranged n-type GaN nanocolumns. In composition of cladding and active layer are estimated to be ~31% and ~87%, respectively, from luminescence peak position, STEM-EDX, and SAED analysis. This is the first demonstration of infrared LED based on III-V nitrides and an initial step toward InGaN-based infrared optical devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Nanocolumn / Nanowire / Nanorod / LED / Selective-Area Growth / Nitride Semiconductor / MBE /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 292, LQE2011-121, pp. 127-130, Nov. 2011.
Paper # LQE2011-121 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-98 CPM2011-147 LQE2011-121 Link to ES Tech. Rep. Archives: ED2011-98 CPM2011-147 LQE2011-121

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall,Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer 
Sub Title (in English)  
Keyword(1) Nanocolumn  
Keyword(2) Nanowire  
Keyword(3) Nanorod  
Keyword(4) LED  
Keyword(5) Selective-Area Growth  
Keyword(6) Nitride Semiconductor  
Keyword(7) MBE  
Keyword(8)  
1st Author's Name Jumpei Kamimura  
1st Author's Affiliation Sophia University (Sophia Univ.)
2nd Author's Name Katsumi Kishino  
2nd Author's Affiliation Sophia University (Sophia Univ.)
3rd Author's Name Kouichi Kamiyama  
3rd Author's Affiliation Sophia University (Sophia Univ.)
4th Author's Name Akihiko Kikuchi  
4th Author's Affiliation Sophia University (Sophia Univ.)
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Speaker Author-1 
Date Time 2011-11-18 15:05:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2011-98, CPM2011-147, LQE2011-121 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.127-130 
#Pages
Date of Issue 2011-11-10 (ED, CPM, LQE) 


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