Paper Abstract and Keywords |
Presentation |
2011-11-18 15:05
Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121 Link to ES Tech. Rep. Archives: ED2011-98 CPM2011-147 LQE2011-121 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at the room temperature; the LED consists of the p-type Ga-rich InGaN cladding layer, In-rich InGaN active layer, and regularly arranged n-type GaN nanocolumns. In composition of cladding and active layer are estimated to be ~31% and ~87%, respectively, from luminescence peak position, STEM-EDX, and SAED analysis. This is the first demonstration of infrared LED based on III-V nitrides and an initial step toward InGaN-based infrared optical devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Nanocolumn / Nanowire / Nanorod / LED / Selective-Area Growth / Nitride Semiconductor / MBE / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 292, LQE2011-121, pp. 127-130, Nov. 2011. |
Paper # |
LQE2011-121 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-98 CPM2011-147 LQE2011-121 Link to ES Tech. Rep. Archives: ED2011-98 CPM2011-147 LQE2011-121 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2011-11-17 - 2011-11-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Katsura Hall,Kyoto Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2011-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer |
Sub Title (in English) |
|
Keyword(1) |
Nanocolumn |
Keyword(2) |
Nanowire |
Keyword(3) |
Nanorod |
Keyword(4) |
LED |
Keyword(5) |
Selective-Area Growth |
Keyword(6) |
Nitride Semiconductor |
Keyword(7) |
MBE |
Keyword(8) |
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1st Author's Name |
Jumpei Kamimura |
1st Author's Affiliation |
Sophia University (Sophia Univ.) |
2nd Author's Name |
Katsumi Kishino |
2nd Author's Affiliation |
Sophia University (Sophia Univ.) |
3rd Author's Name |
Kouichi Kamiyama |
3rd Author's Affiliation |
Sophia University (Sophia Univ.) |
4th Author's Name |
Akihiko Kikuchi |
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Sophia University (Sophia Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-11-18 15:05:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2011-98, CPM2011-147, LQE2011-121 |
Volume (vol) |
vol.111 |
Number (no) |
no.290(ED), no.291(CPM), no.292(LQE) |
Page |
pp.127-130 |
#Pages |
4 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
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