Current Density Analysis in Contact Area by Using Light Emission Diode Wafer
○Shigeru Sawada・Shigeki Tsukiji（Mie Univ.）・Terutaka Tamai（ElconTech Consulting）・Yasuhiro Hattori（Autonetworks Lab.） エレソ技報アーカイブへのリンク：EMD2011-88
||In order to clarify the theory of contact resistance, there are many reports in these years. Mathematically the
constriction current is derived from Laplace equation at one contact which shape is circle, ellipse, triangle and square. And
numerical approach for constriction current analysis was also preformed by Minowa and Sawada. Although there are many
reports on the contact resistance measurement, not many reports on the detailed behavior of current density distribution in the
contact area experimentally. Therefore, we attempted to observe the behavior of the current density distribution in the contact
by using semiconductor wafers. As a result, it was confirmed that electric current is uniformly distributed over the contact area
covered by an oxide film, while it is concentrated at the periphery of the contact if there is no oxide film at contact. And the
contact resistance of apparent contact area is almost same as real contact area which is also agree with the theory of multi-spot
contact when the number of A-spot is large enough.
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||Constriction Resistance / Electrical Contact / Contact resistance / Current constriction / light emitting diode / Direct observation / Current density distribution /
||信学技報, vol. 111, no. 299, EMD2011-88, pp. 115-119, 2011年11月.
||Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380