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| Presentation | 2011-11-17 10:05 AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)  ED2011-73 CPM2011-122 LQE2011-96 Link to ES Tech. Rep. Archives: ED2011-73 CPM2011-122 LQE2011-96 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Recently, we have successfully reduced the threading dislocation density in AlN layer on SiC substrates to 10$^8$ cm$^{-2}$ by controlling the step heights of the SiC substrates, Ga pre-deposition and avoiding unintentional active-nitrogen exposure prior to AlN growth. In this study, we report the growth of AlN/GaN short-period superlattice (SPSL) on SiC by applying the high-quality AlN growth process. We demonstrate coherent growth of AlN/GaN SPSL on SiC substrates. Thicknesses of AlN and GaN in the SPSL were 12 bilayer (BL) and 2 BL, respectively. The FWHM values of main peak for the AlN/GaN SPSL were 34.2 arcsec for the (0002) ω-scan and 37.9 arcsec for the (10$\bar{1}$2) ω-scan. A RSM near (1 1 $\bar{2}$ 12) reflection of 6H-SiC clearly indicates that AlN/GaN SPSL was coherently grown on 6H-SiC. The very small FHWM values reflect coherent growth of AlN/GaN SPSL on 6H-SiC substrate. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlN / GaN / Molecular-beam epitaxy / Short-period superlattice / Coherent growth / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 290, ED2011-73, pp. 1-4, Nov. 2011. | |
| Paper # | ED2011-73 | |
| Date of Issue | 2011-11-10 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-73 CPM2011-122 LQE2011-96 Link to ES Tech. Rep. Archives: ED2011-73 CPM2011-122 LQE2011-96 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2011-11-17 - 2011-11-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Katsura Hall，Kyoto Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | GaN |
| Keyword(3) | Molecular-beam epitaxy |
| Keyword(4) | Short-period superlattice |
| Keyword(5) | Coherent growth |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryosuke Kikuchi |
| 1st Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 2nd Author's Name | Hironori Okumura |
| 2nd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 3rd Author's Name | Tsunenobu Kimoto |
| 3rd Author's Affiliation | Kyoto University (Kyoto Univ.) |
| 4th Author's Name | Jun Suda |
| 4th Author's Affiliation | Kyoto University (Kyoto Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-11-17 10:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-73, CPM2011-122, LQE2011-96 |
| Volume (vol) | vol.111 |
| Number (no) | no.290(ED), no.291(CPM), no.292(LQE) |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2011-11-10 (ED, CPM, LQE) |
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