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Paper Abstract and Keywords
Presentation 2011-11-17 15:40
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures
Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 Link to ES Tech. Rep. Archives: ED2011-83 CPM2011-132 LQE2011-106
Abstract (in Japanese) (See Japanese page) 
(in English) In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier structures have been proposed that are favorable for attaining a higher drain current density and advantageous for E-mode device fabrication. In the proposed enhanced-barrier structures, a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, with the inserted layer removed in the recessed region. This enlarges the difference in the electron density in recessed and non-recessed regions, since the electron density was confirmed to increase by the inserted layer. The enhanced-barrier structures were applied to a double-heterostructure GaN channel, which helps depletion of channel electrons and hence favorable for higher threshold voltage. The fabricated devices employing MIS (insulated-gate) structure exhibited an excellent E-mode operation with a threshold voltage of +3.6 V and a drain current density of 620 mA/mm.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HFET / E-mode / recessed-gate / enhanced-barrier structure / MIS structure / double-heterostructure channel / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 292, LQE2011-106, pp. 49-54, Nov. 2011.
Paper # LQE2011-106 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2011-83 CPM2011-132 LQE2011-106 Link to ES Tech. Rep. Archives: ED2011-83 CPM2011-132 LQE2011-106

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall,Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures 
Sub Title (in English)  
Keyword(1) GaN HFET  
Keyword(2) E-mode  
Keyword(3) recessed-gate  
Keyword(4) enhanced-barrier structure  
Keyword(5) MIS structure  
Keyword(6) double-heterostructure channel  
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Keyword(8)  
1st Author's Name Narihiko Maeda  
1st Author's Affiliation NTT (NTT)
2nd Author's Name Masanobu Hiroki  
2nd Author's Affiliation NTT (NTT)
3rd Author's Name Satoshi Sasaki  
3rd Author's Affiliation NTT (NTT)
4th Author's Name Yuichi Harada  
4th Author's Affiliation NTT (NTT)
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Speaker Author-1 
Date Time 2011-11-17 15:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2011-83, CPM2011-132, LQE2011-106 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.49-54 
#Pages
Date of Issue 2011-11-10 (ED, CPM, LQE) 


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