Paper Abstract and Keywords |
Presentation |
2011-11-17 15:40
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 Link to ES Tech. Rep. Archives: ED2011-83 CPM2011-132 LQE2011-106 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier structures have been proposed that are favorable for attaining a higher drain current density and advantageous for E-mode device fabrication. In the proposed enhanced-barrier structures, a thin AlGaN layer with a higher Al composition is inserted into the AlGaN barrier, with the inserted layer removed in the recessed region. This enlarges the difference in the electron density in recessed and non-recessed regions, since the electron density was confirmed to increase by the inserted layer. The enhanced-barrier structures were applied to a double-heterostructure GaN channel, which helps depletion of channel electrons and hence favorable for higher threshold voltage. The fabricated devices employing MIS (insulated-gate) structure exhibited an excellent E-mode operation with a threshold voltage of +3.6 V and a drain current density of 620 mA/mm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN HFET / E-mode / recessed-gate / enhanced-barrier structure / MIS structure / double-heterostructure channel / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 292, LQE2011-106, pp. 49-54, Nov. 2011. |
Paper # |
LQE2011-106 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-83 CPM2011-132 LQE2011-106 Link to ES Tech. Rep. Archives: ED2011-83 CPM2011-132 LQE2011-106 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2011-11-17 - 2011-11-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Katsura Hall,Kyoto Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2011-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures |
Sub Title (in English) |
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Keyword(1) |
GaN HFET |
Keyword(2) |
E-mode |
Keyword(3) |
recessed-gate |
Keyword(4) |
enhanced-barrier structure |
Keyword(5) |
MIS structure |
Keyword(6) |
double-heterostructure channel |
Keyword(7) |
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1st Author's Name |
Narihiko Maeda |
1st Author's Affiliation |
NTT (NTT) |
2nd Author's Name |
Masanobu Hiroki |
2nd Author's Affiliation |
NTT (NTT) |
3rd Author's Name |
Satoshi Sasaki |
3rd Author's Affiliation |
NTT (NTT) |
4th Author's Name |
Yuichi Harada |
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NTT (NTT) |
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Speaker |
Author-1 |
Date Time |
2011-11-17 15:40:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2011-83, CPM2011-132, LQE2011-106 |
Volume (vol) |
vol.111 |
Number (no) |
no.290(ED), no.291(CPM), no.292(LQE) |
Page |
pp.49-54 |
#Pages |
6 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
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