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| Presentation | 2011-11-17 15:15 Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS)  ED2011-82 CPM2011-131 LQE2011-105 Link to ES Tech. Rep. Archives: ED2011-82 CPM2011-131 LQE2011-105 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estimated that the energy level of the traps responsible for current collapse lies between 1.9eV and 2.6eV from conduction band. The recovery time constant around 270s, however, has almost no temperature dependency indicating not by the electron emission from the traps. It is estimated that the observed recovery may be not related to direct trap mechanisms but other processes such as hole generation by band to band tunneling. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN / HFET / current collapse / deep level / band to band tunneling / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 290, ED2011-82, pp. 43-48, Nov. 2011. | |
| Paper # | ED2011-82 | |
| Date of Issue | 2011-11-10 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-82 CPM2011-131 LQE2011-105 Link to ES Tech. Rep. Archives: ED2011-82 CPM2011-131 LQE2011-105 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2011-11-17 - 2011-11-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Katsura Hall，Kyoto Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Recovery process in AlGaN/GaN HFET Current Collapse |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | HFET |
| Keyword(3) | current collapse |
| Keyword(4) | deep level |
| Keyword(5) | band to band tunneling |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Taishi Hosokawa |
| 1st Author's Affiliation | Tokushima University (Tokushima Univ./STS) |
| 2nd Author's Name | Yusuke Ikawa |
| 2nd Author's Affiliation | Tokushima University (Tokushima Univ./STS) |
| 3rd Author's Name | Yusuke Kio |
| 3rd Author's Affiliation | Tokushima University (Tokushima Univ./STS) |
| 4th Author's Name | Jin-Ping Ao |
| 4th Author's Affiliation | Tokushima University (Tokushima Univ./STS) |
| 5th Author's Name | Yasuo Ohno |
| 5th Author's Affiliation | Tokushima University (Tokushima Univ./STS) |
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| Speaker | Author-1 |
| Date Time | 2011-11-17 15:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-82, CPM2011-131, LQE2011-105 |
| Volume (vol) | vol.111 |
| Number (no) | no.290(ED), no.291(CPM), no.292(LQE) |
| Page | pp.43-48 |
| #Pages | 6 |
| Date of Issue | 2011-11-10 (ED, CPM, LQE) |
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