Paper Abstract and Keywords |
Presentation |
2011-11-10 13:00
[Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117 Link to ES Tech. Rep. Archives: SDM2011-117 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 μA). A con-tactless simple cell structure makes it possible to reduce the cell size to 4F2 and the number of process steps. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. Both low cost and gigabyte-per-second programming throughput are thus made possible by this stackable phase-change memory. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
phase-change memory / poly-Si MOS transistor / stackable / three-dimensional / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 281, SDM2011-117, pp. 11-15, Nov. 2011. |
Paper # |
SDM2011-117 |
Date of Issue |
2011-11-03 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2011-117 Link to ES Tech. Rep. Archives: SDM2011-117 |
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