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| Presentation | 2011-10-21 10:15 Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI), Takeo Hattori, Tadahiro Ohmi (Tohoku Univ.)  SDM2011-105 Link to ES Tech. Rep. Archives: SDM2011-105 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) and oxygen molecules (OM) are reported. For SiO2 films formed using OR, 1) Si2+ and Si3+ are located in the same layer, 2) Si1+ is located beneath Si2+ or Si3+ layer. On the other hand, for SiO2 films formed using OM at 900 °C, 1) Si1+ and Si2+ are located in the same layer, 2) Si1+ and Si2+ are located beneath Si3+ layer. Therefore, the compositional and structural transition layer at the SiO2/Si interface formed using OR is clearly different from that formed using OM. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | / / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 249, SDM2011-105, pp. 49-52, Oct. 2011. | |
| Paper # | SDM2011-105 | |
| Date of Issue | 2011-10-13 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-105 Link to ES Tech. Rep. Archives: SDM2011-105 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-10-20 - 2011-10-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku Univ. (Niche) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process science and new process technologies |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules |
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| 1st Author's Name | Tomoyuki Suwa |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Yuki Kumagai |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Akinobu Teramoto |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Toyohiko Kinoshita |
| 4th Author's Affiliation | Japan Synchrotron Radiation Research Institute (JASRI) |
| 5th Author's Name | Takayuki Muro |
| 5th Author's Affiliation | Japan Synchrotron Radiation Research Institute (JASRI) |
| 6th Author's Name | Takeo Hattori |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Tadahiro Ohmi |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-10-21 10:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2011-105 |
| Volume (vol) | vol.111 |
| Number (no) | no.249 |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2011-10-13 (SDM) |
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