IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-10-14 15:20
Correlation between FE-TSC and dielectric properties observed in (BEDT-TTF)(TCNQ) crystalline FET
Mitsutoshi Hanada, Masatoshi Sakai, Masato Ishiguro (Chiba Univ.), Ryosuke Matsubara (NAIST), Hiroshi Yamauchi (Chiba Univ.), Masakazu Nakamura (NAIST), Kazuhiro Kudo (Chiba Univ.) OME2011-53 Link to ES Tech. Rep. Archives: OME2011-53
Abstract (in Japanese) (See Japanese page) 
(in English) We have measured thermally stimulated current (TSC) attributed to relaxation of spontaneous polarization induced by poling-gate-voltage in β’-(BEDT-TTF)(TCNQ) crystalline FET. A peak of TSC was observed at around 280K, which indicated abrupt relaxation of spontaneous polarization at 280K. Correlation between FE-TSC and dielectric properties observed in β’-(BEDT-TTF)(TCNQ) crystalline FET support the existence of ferroelectric phase transition at 280K.
Keyword (in Japanese) (See Japanese page) 
(in English) Charge transfer complex / Mott insulator / Ferroelectricity / Charge order / Thermally stimulated current / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 236, OME2011-53, pp. 27-30, Oct. 2011.
Paper # OME2011-53 
Date of Issue 2011-10-07 (OME) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2011-53 Link to ES Tech. Rep. Archives: OME2011-53

Conference Information
Committee OME  
Conference Date 2011-10-14 - 2011-10-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. B3-2 
Topics (in Japanese) (See Japanese page) 
Topics (in English) General Aspects and Miscellaneous Organic Devices 
Paper Information
Registration To OME 
Conference Code 2011-10-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Correlation between FE-TSC and dielectric properties observed in (BEDT-TTF)(TCNQ) crystalline FET 
Sub Title (in English)  
Keyword(1) Charge transfer complex  
Keyword(2) Mott insulator  
Keyword(3) Ferroelectricity  
Keyword(4) Charge order  
Keyword(5) Thermally stimulated current  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mitsutoshi Hanada  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Masatoshi Sakai  
2nd Author's Affiliation Chiba University (Chiba Univ.)
3rd Author's Name Masato Ishiguro  
3rd Author's Affiliation Chiba University (Chiba Univ.)
4th Author's Name Ryosuke Matsubara  
4th Author's Affiliation NAIST (NAIST)
5th Author's Name Hiroshi Yamauchi  
5th Author's Affiliation Chiba University (Chiba Univ.)
6th Author's Name Masakazu Nakamura  
6th Author's Affiliation NAIST (NAIST)
7th Author's Name Kazuhiro Kudo  
7th Author's Affiliation Chiba University (Chiba Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker
Date Time 2011-10-14 15:20:00 
Presentation Time 20 
Registration for OME 
Paper # IEICE-OME2011-53 
Volume (vol) IEICE-111 
Number (no) no.236 
Page pp.27-30 
#Pages IEICE-4 
Date of Issue IEICE-OME-2011-10-07 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan