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Paper Abstract and Keywords
Presentation 2011-08-26 09:50
Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53 Link to ES Tech. Rep. Archives: SDM2011-85 ICD2011-53
Abstract (in Japanese) (See Japanese page) 
(in English) A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 μA) compared to the conventional memory structure. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. A con-tactless simple cell structure makes it possible to reduce the cell size to 4F2 and the number of process steps. Low cost and gigabyte-per-second programming throughput are thus made possible by this stackable phase-change memory.
Keyword (in Japanese) (See Japanese page) 
(in English) phase-change memory / poly-Si MOS transistor / stackable / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 187, SDM2011-85, pp. 75-78, Aug. 2011.
Paper # SDM2011-85 
Date of Issue 2011-08-18 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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技術研究報告に掲載された論文の著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-85 ICD2011-53 Link to ES Tech. Rep. Archives: SDM2011-85 ICD2011-53

Conference Information
Committee SDM ICD  
Conference Date 2011-08-25 - 2011-08-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama kenminkaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2011-08-SDM-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput 
Sub Title (in English)  
Keyword(1) phase-change memory  
Keyword(2) poly-Si MOS transistor  
Keyword(3) stackable  
Keyword(4)  
Keyword(5)  
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1st Author's Name Yoshitaka Sasago  
1st Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
2nd Author's Name Masaharu Kinoshita  
2nd Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
3rd Author's Name Hiroyuki Minemura  
3rd Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
4th Author's Name Yumiko Anzai  
4th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
5th Author's Name Mitsuharu Tai  
5th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
6th Author's Name Kenzo Kurotsuchi  
6th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
7th Author's Name Seiichi Morita  
7th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
8th Author's Name Toshikazu Takahashi  
8th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
9th Author's Name Takashi Takahama  
9th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
10th Author's Name Tadao Morimoto  
10th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
11th Author's Name Toshiyuki Mine  
11th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
12th Author's Name Akio Shima  
12th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
13th Author's Name Takashi Kobayashi  
13th Author's Affiliation Hitachi, Ltd., Central Research Laboratory (Hitachi)
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Speaker
Date Time 2011-08-26 09:50:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2011-85,IEICE-ICD2011-53 
Volume (vol) IEICE-111 
Number (no) no.187(SDM), no.188(ICD) 
Page pp.75-78 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2011-08-18,IEICE-ICD-2011-08-18 


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