Paper Abstract and Keywords |
Presentation |
2011-08-10 13:25
DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-57 Link to ES Tech. Rep. Archives: CPM2011-57 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A ten-layer quantum-dot structure with GsAsP strain-compensation layer grown by using Bi surfactant was evaluated by DLTS (Deep Level Transient Spectroscopy) measurement. Since it was clarified that the capture time of carriers for the DLTS was significantly long, another DLTS measurement for evaluating the carrier-capture process was introduced. The results of these measurements showed that the characteristics such as activation energies were considerably similar to each other for the emission and capture processes. Thus, it is pointed out that the limiting factor for both of the processes is determined by the identical energy barrier, which is formed by GsAsP strain-compensation layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
quantum dots / InAs / InGaAs / DLTS / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 176, CPM2011-57, pp. 7-10, Aug. 2011. |
Paper # |
CPM2011-57 |
Date of Issue |
2011-08-03 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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CPM2011-57 Link to ES Tech. Rep. Archives: CPM2011-57 |
Conference Information |
Committee |
CPM |
Conference Date |
2011-08-10 - 2011-08-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2011-08-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure |
Sub Title (in English) |
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Keyword(1) |
quantum dots |
Keyword(2) |
InAs |
Keyword(3) |
InGaAs |
Keyword(4) |
DLTS |
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1st Author's Name |
Soitiro Suzuki |
1st Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
2nd Author's Name |
Shinya Sato |
2nd Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
3rd Author's Name |
Takuro Iwasaki |
3rd Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
4th Author's Name |
Takehiko Tawara |
4th Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
5th Author's Name |
Kouta Tateno |
5th Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
6th Author's Name |
Hideki Gotoh |
6th Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
7th Author's Name |
Tetsuomi Sogawa |
7th Author's Affiliation |
NTT Basic Research Laboratories (NTT) |
8th Author's Name |
Hiroshi Okamoto |
8th Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-08-10 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2011-57 |
Volume (vol) |
vol.111 |
Number (no) |
no.176 |
Page |
pp.7-10 |
#Pages |
4 |
Date of Issue |
2011-08-03 (CPM) |
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