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| Presentation | 2011-07-04 13:20 Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2011-59 Link to ES Tech. Rep. Archives: SDM2011-59 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For realizing the next generation complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs), High-k/Ge gate stack structure attracts a high level interest. In particular, it is necessary to achieve both a low interface state density (< 1011 cm－2-eV－1) and a low equivalent oxide thickness (EOT (<1 nm)) for High-k/Ge structure. Al2O3 is a hopeful material as an interfacial layer for High-k/Ge stacks because of a thermal stability and a comparatively high dielectric. However, an Al2O3/Ge structure with a low interface state density has not been realized. Therefore, the decrease in the interface state density of Al2O3/Ge structure is necessary. In this study, we focused on the O2-annealing to Al2O3/Ge structure. As a result, the interface state density of the Al2O3/Ge structure decreased with the O2-annealing. In addition, the O2-annealing causes Ge diffusion into the Al2O3 film and crystallization with a characteristic orientation of the Al2O3 film. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | gate stack structure / Al2O3 / Ge / oxygen annealing / interface state density / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-59, pp. 51-56, July 2011. | |
| Paper # | SDM2011-59 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-59 Link to ES Tech. Rep. Archives: SDM2011-59 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties |
| Sub Title (in English) | |
| Keyword(1) | gate stack structure |
| Keyword(2) | Al2O3 |
| Keyword(3) | Ge |
| Keyword(4) | oxygen annealing |
| Keyword(5) | interface state density |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shigehisa Shibayama |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Kimihiko Kato |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Mitsuo Sakashita |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Wakana Takeuchi |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Osamu Nakatsuka |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 6th Author's Name | Shigeaki Zaima |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 13:20:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-59 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.51-56 |
| #Pages | 6 |
| Date of Issue | 2011-06-27 (SDM) |
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