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| Presentation | 2011-07-04 09:00 High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.)  SDM2011-50 Link to ES Tech. Rep. Archives: SDM2011-50 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper reports our experimental study for further EOT scaling with small interface state density based on controlling direct contact La-silicate/Si interface. The interface state density of 1.6 x 1011 cm-2eV-1 can be achieved by annealing at 800 oC for 30min in forming gas while significant increase in EOT has been also observed. Increase in EOT caused by high temperature annealing has been drastically inhibited by Metal Inserted Poly-Si (MIPS) stacks with high quality interface. The effective electron mobility of 155 cm2/Vsec at 1MV/cm with an EOT of 0.62 nm has been achieved in direct contact La-silicate/Si structure by combination of MIPS stacks with high temperature annealing. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | EOT / high-k / rare earth oxide / silicate / interfacial property / effective mobility / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-50, pp. 1-5, July 2011. | |
| Paper # | SDM2011-50 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-50 Link to ES Tech. Rep. Archives: SDM2011-50 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Temperature Annealing with MIPS Structure for Improving Interfacial Property at La-silicate/Si Interface and Achieving Scaled EOT |
| Sub Title (in English) | |
| Keyword(1) | EOT |
| Keyword(2) | high-k |
| Keyword(3) | rare earth oxide |
| Keyword(4) | silicate |
| Keyword(5) | interfacial property |
| Keyword(6) | effective mobility |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takamasa Kawanago |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 2nd Author's Name | Kuniyuki Kakushima |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 3rd Author's Name | Parhat Ahmet |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 4th Author's Name | Kazuo Tsutsui |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 5th Author's Name | Akira Nishiyama |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 6th Author's Name | Nobuyuki Sugii |
| 6th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 7th Author's Name | Kenji Natori |
| 7th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 8th Author's Name | Takeo Hattori |
| 8th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
| 9th Author's Name | Hiroshi Iwai |
| 9th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 09:00:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-50 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.1-5 |
| #Pages | 5 |
| Date of Issue | 2011-06-27 (SDM) |
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