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| Presentation | 2011-07-04 11:20 Photoluminescence and interface properties of Si nanolayers and nanowires Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba)  SDM2011-56 Link to ES Tech. Rep. Archives: SDM2011-56 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed PL peak shift due to quantum confinement effect in ultra thin SOI samples with thickness between 2.7 and 25.2 nm. Furthermore, we have observed increase in PL intensities at higher temperature as compared with bulk Si due to enhanced electron-hole Coulomb interaction. We have optically detected change in the interface defect density of Si nanowires with/or without hydrogen annealing process and depending on hydrogen annealing temperature by investigating PL spectra. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | photoluminescence / SOI / interface states / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-56, pp. 35-39, July 2011. | |
| Paper # | SDM2011-56 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-56 Link to ES Tech. Rep. Archives: SDM2011-56 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Photoluminescence and interface properties of Si nanolayers and nanowires |
| Sub Title (in English) | |
| Keyword(1) | photoluminescence |
| Keyword(2) | SOI |
| Keyword(3) | interface states |
| Keyword(4) | |
| Keyword(5) | |
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| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoko Sakurai |
| 1st Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
| 2nd Author's Name | Kenji Ohmori |
| 2nd Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
| 3rd Author's Name | Keisaku Yamada |
| 3rd Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
| 4th Author's Name | Kuniyuki Kakushima |
| 4th Author's Affiliation | Tokyo Institute Technology (Tokyo Insti. Tech.) |
| 5th Author's Name | Hiroshi Iwai |
| 5th Author's Affiliation | Tokyo Institute Technology (Tokyo Insti. Tech.) |
| 6th Author's Name | Kenji Shiraishi |
| 6th Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
| 7th Author's Name | Shintaro Nomura |
| 7th Author's Affiliation | University of Tsukuba (Univ. of Tsukuba) |
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| Speaker | Author-7 |
| Date Time | 2011-07-04 11:20:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-56 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.35-39 |
| #Pages | 5 |
| Date of Issue | 2011-06-27 (SDM) |
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