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| Presentation | 2011-07-04 10:00 Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.)  SDM2011-53 Link to ES Tech. Rep. Archives: SDM2011-53 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before or controlling the substrate temperature during oxide deposition were investigated. HMDS was used as a surface passivator and compared to widely-used sulfur based passivation. Using HMDS resulted in reduced frequency dispersion and interface state densities of W/ La2O3/ In0.53Ga0.47As capacitors without sacrificing capacitance value in accumulation condition. The effects of controlling InGaAs substrate temperature during electron beam deposition of HfO2 on electrical characteristics of W/HfO2/n-In0.53Ga0.47As capacitors are investigated. It is found that by depositing a thin HfO2 layer at the interface when substrate temperature is raised to 300 oC, frequency dispersion at depletion and accumulation conditions is reduced and interface state density is lowered regardless of the total HfO2 thickness. The frequency dispersion in accumulation was investigated through conductance method in various temperatures. A model based on traps residing within the bulk of the semiconductor was proposed which could explain the dispersive nature of capacitance in accumulation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High-k / InGaAs / Interface state density / bulk trap / frequency dispersion / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-53, pp. 17-22, July 2011. | |
| Paper # | SDM2011-53 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-53 Link to ES Tech. Rep. Archives: SDM2011-53 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods |
| Sub Title (in English) | |
| Keyword(1) | High-k |
| Keyword(2) | InGaAs |
| Keyword(3) | Interface state density |
| Keyword(4) | bulk trap |
| Keyword(5) | frequency dispersion |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Darius Zade |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Ryuji Hosoi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Ahmet Parhat |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name | Kuniyuki Kakushima |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 5th Author's Name | Kazuo Tsutsui |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 6th Author's Name | Akira Nishiyama |
| 6th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 7th Author's Name | Nobuyuki Sugii |
| 7th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 8th Author's Name | Kenji Natori |
| 8th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 9th Author's Name | Takeo Hattori |
| 9th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 10th Author's Name | Hiroshi Iwai |
| 10th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 10:00:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-53 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.17-22 |
| #Pages | 6 |
| Date of Issue | 2011-06-27 (SDM) |
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