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Paper Abstract and Keywords
Presentation 2011-07-04 16:40
Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices
Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68 Link to ES Tech. Rep. Archives: SDM2011-68
Abstract (in Japanese) (See Japanese page) 
(in English) We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green laser annealing (GLA). The grain size of the upper layer polycrystalline Si (poly-Si) and the crystalline quality of the lower poly-Si are improved by optimization of the laser energy density in GLA. We also study on the device fabrication of multifunctional thin film devices on the double-layered poly-Si in a single process. Thin film transistors (TFTs) and thin film photo diodes (TFPDs), fabricated on the upper and lower poly-Si films, respectively, have shown clear device operations. The optimization of the laser energy density in GLA improves the quality of the upper and lower poly-Si films, leading to the enhancement of the performance of TFTs and TFPDs.
Keyword (in Japanese) (See Japanese page) 
(in English) polycrystalline silicon / laser crystallization / thin film transistor / three-dimensional multi-layered structure / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 114, SDM2011-68, pp. 103-108, July 2011.
Paper # SDM2011-68 
Date of Issue 2011-06-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-68 Link to ES Tech. Rep. Archives: SDM2011-68

Conference Information
Committee SDM  
Conference Date 2011-07-04 - 2011-07-04 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2011-07-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices 
Sub Title (in English)  
Keyword(1) polycrystalline silicon  
Keyword(2) laser crystallization  
Keyword(3) thin film transistor  
Keyword(4) three-dimensional multi-layered structure  
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1st Author's Name Masahiro Horita  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Koji Yamasaki  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Emi Machida  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Yasuaki Ishikawa  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Yukiharu Uraoka  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2011-07-04 16:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-68 
Volume (vol) vol.111 
Number (no) no.114 
Page pp.103-108 
#Pages
Date of Issue 2011-06-27 (SDM) 


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