Paper Abstract and Keywords |
Presentation |
2011-07-04 16:40
Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68 Link to ES Tech. Rep. Archives: SDM2011-68 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green laser annealing (GLA). The grain size of the upper layer polycrystalline Si (poly-Si) and the crystalline quality of the lower poly-Si are improved by optimization of the laser energy density in GLA. We also study on the device fabrication of multifunctional thin film devices on the double-layered poly-Si in a single process. Thin film transistors (TFTs) and thin film photo diodes (TFPDs), fabricated on the upper and lower poly-Si films, respectively, have shown clear device operations. The optimization of the laser energy density in GLA improves the quality of the upper and lower poly-Si films, leading to the enhancement of the performance of TFTs and TFPDs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
polycrystalline silicon / laser crystallization / thin film transistor / three-dimensional multi-layered structure / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 114, SDM2011-68, pp. 103-108, July 2011. |
Paper # |
SDM2011-68 |
Date of Issue |
2011-06-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2011-68 Link to ES Tech. Rep. Archives: SDM2011-68 |
Conference Information |
Committee |
SDM |
Conference Date |
2011-07-04 - 2011-07-04 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2011-07-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices |
Sub Title (in English) |
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Keyword(1) |
polycrystalline silicon |
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laser crystallization |
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thin film transistor |
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three-dimensional multi-layered structure |
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1st Author's Name |
Masahiro Horita |
1st Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
2nd Author's Name |
Koji Yamasaki |
2nd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
3rd Author's Name |
Emi Machida |
3rd Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
4th Author's Name |
Yasuaki Ishikawa |
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Nara Institute of Science and Technology (NAIST) |
5th Author's Name |
Yukiharu Uraoka |
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Nara Institute of Science and Technology (NAIST) |
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Speaker |
Author-1 |
Date Time |
2011-07-04 16:40:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2011-68 |
Volume (vol) |
vol.111 |
Number (no) |
no.114 |
Page |
pp.103-108 |
#Pages |
6 |
Date of Issue |
2011-06-27 (SDM) |
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