講演抄録/キーワード |
講演名 |
2011-07-04 11:40
Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure ○Kusuman Dari・Wakana Takeuchi・Kimihiko Kato・Shigehisa Shibayama・Mitsuo Sakashita・Osamu Nakatsuka・Shigeaki Zaima(Nagoya Univ.) SDM2011-57 エレソ技報アーカイブへのリンク:SDM2011-57 |
抄録 |
(和) |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structure during nitrogen plasma process. From capacitance-voltage characteristics, we observed the negative flatband voltage shift due to increasing of the net density of positive fixed oxide charge after the light exposure with a photon energy over 7.5 eV. The density of trapped charge and the interface state density significantly increase after the light exposure with a photon energy over 11.3 eV. We also found that these damages can be recovered by the post metallization annealing at 300ºC. |
(英) |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structure during nitrogen plasma process. From capacitance-voltage characteristics, we observed the negative flatband voltage shift due to increasing of the net density of positive fixed oxide charge after the light exposure with a photon energy over 7.5 eV. The density of trapped charge and the interface state density significantly increase after the light exposure with a photon energy over 11.3 eV. We also found that these damages can be recovered by the post metallization annealing at 300ºC. |
キーワード |
(和) |
germanium / aluminum oxide / gate stack structure / MOS structure / plasma process / defects / degradation / interface state density |
(英) |
germanium / aluminum oxide / gate stack structure / MOS structure / plasma process / defects / degradation / interface state density |
文献情報 |
信学技報, vol. 111, no. 114, SDM2011-57, pp. 41-46, 2011年7月. |
資料番号 |
SDM2011-57 |
発行日 |
2011-06-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
SDM2011-57 エレソ技報アーカイブへのリンク:SDM2011-57 |