Paper Abstract and Keywords |
Presentation |
2011-05-20 09:25
Current path control with Nitride semiconductor-based tunnel junction Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33 Link to ES Tech. Rep. Archives: ED2011-20 CPM2011-27 SDM2011-33 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the following two aspects. First, LEDs with tunnel junctions and top n-GaN layers for current spreading were fabricated. Light extraction was improved 1.4 times compared to that of standard LEDs with semi-transparent electrodes. This indicates that the currents were sufficiently spreading at the top n-GaN layers and no light was absorbed at the electrodes. Next, current density distribution and device resistance were estimated in nitride-based vertical cavity surface emitting lasers with the tunnel junctions by finite element method. A reasonably low resistance, 200Ω, was obtained in a suitable device structure, implying potential cw operations at room temperature. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nitride semiconductor / current path control / tunnel junction / surface-emitting laser / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 45, CPM2011-27, pp. 99-104, May 2011. |
Paper # |
CPM2011-27 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2011-20 CPM2011-27 SDM2011-33 Link to ES Tech. Rep. Archives: ED2011-20 CPM2011-27 SDM2011-33 |
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