Paper Abstract and Keywords |
Presentation |
2011-05-20 16:40
Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47 Link to ES Tech. Rep. Archives: ED2011-34 CPM2011-41 SDM2011-47 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing a high Vth and a small current collapse than c-plane HFETs. We also measured current collapse in normally off mode AlGaN/GaN JHFETs with a p-GaN gate. The large current collapse was observed in unpassivated sample, because AlGaN barrier of JHFETs was exposed to air by dry etching. On the other hand current collapse in the SiNx-passivated JHFETs is small and almost the same as that in as-grown HFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN / HFETs / current collapse / non-polar / normally-off / GaN substrate / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 44, ED2011-34, pp. 175-178, May 2011. |
Paper # |
ED2011-34 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-34 CPM2011-41 SDM2011-47 Link to ES Tech. Rep. Archives: ED2011-34 CPM2011-41 SDM2011-47 |
|