Paper Abstract and Keywords |
Presentation |
2011-05-20 13:00
Development of radiation imaging arrays using thick CdTe layers grown on Si substrates by MOVPE Tadahiro Tachi, Hiroaki Inuzuka, Naoya Fujimura, Takaki Kondo, Syuhei Nanba, Shinya Muramatsu, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (NTT) ED2011-26 CPM2011-33 SDM2011-39 Link to ES Tech. Rep. Archives: ED2011-26 CPM2011-33 SDM2011-39 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have been developing large area and high performance 2-dimensional (2D) radiation imaging arrays using thick CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. To improve the detector performance, dark current characteristics of the detector diodes have been studied using the fabricated arrays. The dark-current was found to depend on the growth condition of the CdTe layers, which was suggested by the 2D distribution of the dark current. The dark current was also influenced by 2 different deep levels in the grown CdTe layers. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOVPE / CdTe on Si substrate / Array / Dark Current / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 44, ED2011-26, pp. 131-134, May 2011. |
Paper # |
ED2011-26 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2011-26 CPM2011-33 SDM2011-39 Link to ES Tech. Rep. Archives: ED2011-26 CPM2011-33 SDM2011-39 |
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