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Paper Abstract and Keywords
Presentation 2011-05-20 17:30
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition
Eiji Miyazaki, Takeshi Gouda (Nagoya Univ.), Shigeru Kishimoto (Nagoya Univ./VBL, Nagoya Univ.), Takashi Mizutani (Nagoya Univ.) ED2011-36 CPM2011-43 SDM2011-49 Link to ES Tech. Rep. Archives: ED2011-36 CPM2011-43 SDM2011-49
Abstract (in Japanese) (See Japanese page) 
(in English) We have introduced (NH4)2S surface treatments before the deposition of the Al2O3 gate oxide to improve the electrical properties of Al2O3/AlGaN/GaN MOSFETs. Firstly, the effect of (NH4)2S surface treatment was studied using Al2O3/GaN MOS diodes. The slope in the C-V curve of the MOS diodes with (NH4)2S surface treatments was steeper than that of the devices without (NH4)2S. In addition, Al2O3/GaN interface trap density was decreased by (NH4)2S surface treatments. The hysteresis of the Al2O3/AlGaN/GaN MOSFET with (NH4)2S surface treatments in ID-VGS and gm-VGS characteristics was smaller than that of the device without (NH4)2S surface treatments. In addition, the current saturation in ID-VGS characteristics at a large gate voltage is relaxed. These results indicate that Al2O3/AlGaN interface trap density is decreased by (NH4)2S surface treatments. The annealing of the MOS diodes was shown to be effective in improving the interface quality of the MOS diodes.
Keyword (in Japanese) (See Japanese page) 
(in English) Al2O3/AlGaN/GaN MOSFET / (NH4)2S / interface trap density / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 44, ED2011-36, pp. 185-190, May 2011.
Paper # ED2011-36 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-36 CPM2011-43 SDM2011-49 Link to ES Tech. Rep. Archives: ED2011-36 CPM2011-43 SDM2011-49

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition 
Sub Title (in English)  
Keyword(1) Al2O3/AlGaN/GaN MOSFET  
Keyword(2) (NH4)2S  
Keyword(3) interface trap density  
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1st Author's Name Eiji Miyazaki  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Takeshi Gouda  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Shigeru Kishimoto  
3rd Author's Affiliation Nagoya University/Nagoya University VBL (Nagoya Univ./VBL, Nagoya Univ.)
4th Author's Name Takashi Mizutani  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker
Date Time 2011-05-20 17:30:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2011-36,IEICE-CPM2011-43,IEICE-SDM2011-49 
Volume (vol) IEICE-111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.185-190 
#Pages IEICE-6 
Date of Issue IEICE-ED-2011-05-12,IEICE-CPM-2011-05-12,IEICE-SDM-2011-05-12 


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