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Paper Abstract and Keywords
Presentation 2011-05-19 10:50
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer
Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18 Link to ES Tech. Rep. Archives: ED2011-5 CPM2011-12 SDM2011-18
Abstract (in Japanese) (See Japanese page) 
(in English) 3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is difficult because of presence of defects and strains due to lattice mismatch between Si and 3C-SiC if we grow 3C-SiC by epitaxial growth on Si substrate. Therefore, understanding of effects of defects and strains on electrical characteristic is required. In this work, we evaluate excess carrier lifetime maps with the microwave photoconductivity decay (μ-PCD) method, and then we compare them with distributions of strains and defects. As a result, we found that excess carrier lifetimes are short in strained region in 3C-SiC.
Keyword (in Japanese) (See Japanese page) 
(in English) 3C-SiC / carrier lifetime / strain / μ-PCD method / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 45, CPM2011-12, pp. 21-26, May 2011.
Paper # CPM2011-12 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF ED2011-5 CPM2011-12 SDM2011-18 Link to ES Tech. Rep. Archives: ED2011-5 CPM2011-12 SDM2011-18

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer 
Sub Title (in English)  
Keyword(1) 3C-SiC  
Keyword(2) carrier lifetime  
Keyword(3) strain  
Keyword(4) μ-PCD method  
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1st Author's Name Atsushi Yoshida  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker
Date Time 2011-05-19 10:50:00 
Presentation Time 25 
Registration for CPM 
Paper # IEICE-ED2011-5,IEICE-CPM2011-12,IEICE-SDM2011-18 
Volume (vol) IEICE-111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.21-26 
#Pages IEICE-6 
Date of Issue IEICE-ED-2011-05-12,IEICE-CPM-2011-05-12,IEICE-SDM-2011-05-12 


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