Paper Abstract and Keywords |
Presentation |
2011-05-19 10:50
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer Atsushi Yoshida, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-5 CPM2011-12 SDM2011-18 Link to ES Tech. Rep. Archives: ED2011-5 CPM2011-12 SDM2011-18 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
3C-SiC is a promising material for low loss and high voltage power devices. However realization of 3C-SiC devices is difficult because of presence of defects and strains due to lattice mismatch between Si and 3C-SiC if we grow 3C-SiC by epitaxial growth on Si substrate. Therefore, understanding of effects of defects and strains on electrical characteristic is required. In this work, we evaluate excess carrier lifetime maps with the microwave photoconductivity decay (μ-PCD) method, and then we compare them with distributions of strains and defects. As a result, we found that excess carrier lifetimes are short in strained region in 3C-SiC. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
3C-SiC / carrier lifetime / strain / μ-PCD method / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 45, CPM2011-12, pp. 21-26, May 2011. |
Paper # |
CPM2011-12 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-5 CPM2011-12 SDM2011-18 Link to ES Tech. Rep. Archives: ED2011-5 CPM2011-12 SDM2011-18 |
Conference Information |
Committee |
CPM SDM ED |
Conference Date |
2011-05-19 - 2011-05-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Univ. (VBL) |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2011-05-CPM-SDM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Correlation between strain fields and excess carrier lifetime maps in 3C-SiC wafer |
Sub Title (in English) |
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Keyword(1) |
3C-SiC |
Keyword(2) |
carrier lifetime |
Keyword(3) |
strain |
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μ-PCD method |
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1st Author's Name |
Atsushi Yoshida |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Masashi Kato |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Masaya Ichimura |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2011-05-19 10:50:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
ED2011-5, CPM2011-12, SDM2011-18 |
Volume (vol) |
vol.111 |
Number (no) |
no.44(ED), no.45(CPM), no.46(SDM) |
Page |
pp.21-26 |
#Pages |
6 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
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