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Paper Abstract and Keywords
Presentation 2011-05-19 10:25
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers
Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17 Link to ES Tech. Rep. Archives: ED2011-4 CPM2011-11 SDM2011-17
Abstract (in Japanese) (See Japanese page) 
(in English) To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have been a few reports about the surface recombination on 4H-SiC, and lack of knowledge on the surface recombination velocity makes it difficult to evaluate the real carrier lifetime in 4H-SiC. In order to evaluate surface recombination velocity, this study shows experimental data for the carrier lifetime in free-standing 4H-SiC epilayers with several thicknesses and different surface conditions. As a result, we found that the chemical-mechanical polished (CMP) surface has lower surface recombination velocities than the as-grown epilayer surface, and that the surface recombination velocity after CMP is low on the Si-face compared with that on the C-face.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / Epilayer / Carrier lifetime / Surface recombination / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 45, CPM2011-11, pp. 15-20, May 2011.
Paper # CPM2011-11 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-4 CPM2011-11 SDM2011-17 Link to ES Tech. Rep. Archives: ED2011-4 CPM2011-11 SDM2011-17

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) Epilayer  
Keyword(3) Carrier lifetime  
Keyword(4) Surface recombination  
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1st Author's Name Masashi Kato  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Atsushi Yoshida  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker
Date Time 2011-05-19 10:25:00 
Presentation Time 25 
Registration for CPM 
Paper # IEICE-ED2011-4,IEICE-CPM2011-11,IEICE-SDM2011-17 
Volume (vol) IEICE-111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.15-20 
#Pages IEICE-6 
Date of Issue IEICE-ED-2011-05-12,IEICE-CPM-2011-05-12,IEICE-SDM-2011-05-12 


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