Paper Abstract and Keywords |
Presentation |
2011-05-19 10:25
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers Masashi Kato, Atsushi Yoshida, Masaya Ichimura (Nagoya Inst. of Tech.) ED2011-4 CPM2011-11 SDM2011-17 Link to ES Tech. Rep. Archives: ED2011-4 CPM2011-11 SDM2011-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To fabricate very high voltage SiC devices, control of the carrier lifetime is extremely important. However, there have been a few reports about the surface recombination on 4H-SiC, and lack of knowledge on the surface recombination velocity makes it difficult to evaluate the real carrier lifetime in 4H-SiC. In order to evaluate surface recombination velocity, this study shows experimental data for the carrier lifetime in free-standing 4H-SiC epilayers with several thicknesses and different surface conditions. As a result, we found that the chemical-mechanical polished (CMP) surface has lower surface recombination velocities than the as-grown epilayer surface, and that the surface recombination velocity after CMP is low on the Si-face compared with that on the C-face. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / Epilayer / Carrier lifetime / Surface recombination / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 45, CPM2011-11, pp. 15-20, May 2011. |
Paper # |
CPM2011-11 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-4 CPM2011-11 SDM2011-17 Link to ES Tech. Rep. Archives: ED2011-4 CPM2011-11 SDM2011-17 |
Conference Information |
Committee |
CPM SDM ED |
Conference Date |
2011-05-19 - 2011-05-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Univ. (VBL) |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2011-05-CPM-SDM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Thickness and surface dependence of the carrier lifetime in free-standing n-type 4H-SiC epilayers |
Sub Title (in English) |
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Keyword(1) |
4H-SiC |
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Epilayer |
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Carrier lifetime |
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Surface recombination |
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1st Author's Name |
Masashi Kato |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Atsushi Yoshida |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Masaya Ichimura |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2011-05-19 10:25:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
ED2011-4, CPM2011-11, SDM2011-17 |
Volume (vol) |
vol.111 |
Number (no) |
no.44(ED), no.45(CPM), no.46(SDM) |
Page |
pp.15-20 |
#Pages |
6 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
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