Paper Abstract and Keywords |
Presentation |
2011-05-19 16:40
Growth of GaN and AlGaN on B-Ga2O3 (100) substrate Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki, Hiroshi Amano (Meijo Univ/Nagoya Univ) ED2011-16 CPM2011-23 SDM2011-29 Link to ES Tech. Rep. Archives: ED2011-16 CPM2011-23 SDM2011-29 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
beta-Ga2O3 is one of the most attractive substrates for AlGaN-based UV light-emitting-diodes (LEDs). Its transparency up to 260 nm wavelength and n-type conductivity can lead to small absorptions of UV light in beta-Ga2O3 and possible vertical structures of the LEDs. In this study, we investigated the impact of thermal annealing temperature of the beta-Ga2O3 substrate. We characterized surface roughness of (100) beta-Ga2O3 after annealing with different temperatures and crystal qualities of GaN and AlGaN on the (100) beta-Ga2O3 by MOVPE. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
beta-Ga2O3(100) / thermal annealing / GaN / MOVPE / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 45, CPM2011-23, pp. 77-81, May 2011. |
Paper # |
CPM2011-23 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2011-16 CPM2011-23 SDM2011-29 Link to ES Tech. Rep. Archives: ED2011-16 CPM2011-23 SDM2011-29 |
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