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| Presentation | 2011-05-19 14:15 Molecular beam epitaxy growth of BGaP Noriyuki Urakami, Futoshi Fukami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.)  ED2011-11 CPM2011-18 SDM2011-24 Link to ES Tech. Rep. Archives: ED2011-11 CPM2011-18 SDM2011-24 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Growth properties of dilute BGaP layers have been investigated by molecular beam epitaxy for strain compensation layers in strained quantum well lasers fabricated on a Si substrate. B composition in BGaP increased with decreasing growth temperature. Based on valence force field analysis, B-P bonds in GaP matrix are stretched by tensile stress and the bond become week. At relatively high temperature (580°C), B-P bonds would be broken by thermal energy and/or desorb from the growth surface. At low temperature (500°C), surface coverage of P atoms become high, and then adsorbed B could make stable B-P bonds even under large stress. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | BGaP / Molecular beam epitaxy / Electron beam heating / X-ray diffraction / valence force field / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 44, ED2011-11, pp. 55-58, May 2011. | |
| Paper # | ED2011-11 | |
| Date of Issue | 2011-05-12 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-11 CPM2011-18 SDM2011-24 Link to ES Tech. Rep. Archives: ED2011-11 CPM2011-18 SDM2011-24 |
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| Conference Information | |
| Committee | CPM SDM ED |
| Conference Date | 2011-05-19 - 2011-05-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. (VBL) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-05-CPM-SDM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Molecular beam epitaxy growth of BGaP |
| Sub Title (in English) | |
| Keyword(1) | BGaP |
| Keyword(2) | Molecular beam epitaxy |
| Keyword(3) | Electron beam heating |
| Keyword(4) | X-ray diffraction |
| Keyword(5) | valence force field |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Noriyuki Urakami |
| 1st Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 2nd Author's Name | Futoshi Fukami |
| 2nd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 3rd Author's Name | Hiroto Sekiguchi |
| 3rd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 4th Author's Name | Hiroshi Okada |
| 4th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
| 5th Author's Name | Akihiro Wakahara |
| 5th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ. Tech.) |
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| Speaker | Author-1 |
| Date Time | 2011-05-19 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-11, CPM2011-18, SDM2011-24 |
| Volume (vol) | vol.111 |
| Number (no) | no.44(ED), no.45(CPM), no.46(SDM) |
| Page | pp.55-58 |
| #Pages | 4 |
| Date of Issue | 2011-05-12 (ED, CPM, SDM) |
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