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| Presentation | 2011-05-19 13:50 Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate Keisuke Kumagai, Kohei Shoji, Tsuyoshi Kawai, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ.Tech.)  ED2011-10 CPM2011-17 SDM2011-23 Link to ES Tech. Rep. Archives: ED2011-10 CPM2011-17 SDM2011-23 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectronic integrated circuits (OEIC). In order to design the optical confinement structure, growth properties and optical constants of AlGaPN have been investigated. Nitrogen incorporation efficiency is increased by adding Al contents, but shows small effect of the growth temperatures. A high quality AlGaPN which can be lattice matched to Si obtained at the growth temperature of 600 °C. The refractive indexes of AlGaPN with the N concentration of a few % are almost the same an AlGaP. Finally AlPN/GaPN DBR is fabricated. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | OEIC / III-V-N alloys / GaPN / AlPN / Optical confinement structure / DBR / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 44, ED2011-10, pp. 49-54, May 2011. | |
| Paper # | ED2011-10 | |
| Date of Issue | 2011-05-12 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-10 CPM2011-17 SDM2011-23 Link to ES Tech. Rep. Archives: ED2011-10 CPM2011-17 SDM2011-23 |
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| Conference Information | |
| Committee | CPM SDM ED |
| Conference Date | 2011-05-19 - 2011-05-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. (VBL) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-05-CPM-SDM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Molecular beam epitaxy growth of AlGaPN alloys for optical confinement structure on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | OEIC |
| Keyword(2) | III-V-N alloys |
| Keyword(3) | GaPN |
| Keyword(4) | AlPN |
| Keyword(5) | Optical confinement structure |
| Keyword(6) | DBR |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Keisuke Kumagai |
| 1st Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
| 2nd Author's Name | Kohei Shoji |
| 2nd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
| 3rd Author's Name | Tsuyoshi Kawai |
| 3rd Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
| 4th Author's Name | Keisuke Yamane |
| 4th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
| 5th Author's Name | Hiroto Sekiguchi |
| 5th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
| 6th Author's Name | Hiroshi Okada |
| 6th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
| 7th Author's Name | Akihiro Wakahara |
| 7th Author's Affiliation | Toyohashi University of Technology (Toyohashi Univ.Tech.) |
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| Speaker | Author-1 |
| Date Time | 2011-05-19 13:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-10, CPM2011-17, SDM2011-23 |
| Volume (vol) | vol.111 |
| Number (no) | no.44(ED), no.45(CPM), no.46(SDM) |
| Page | pp.49-54 |
| #Pages | 6 |
| Date of Issue | 2011-05-12 (ED, CPM, SDM) |
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