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Paper Abstract and Keywords
Presentation 2011-04-19 15:00
Basic memory characteristics of HfO2-CB-RAM
Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) ICD2011-17 Link to ES Tech. Rep. Archives: ICD2011-17
Abstract (in Japanese) (See Japanese page) 
(in English) CB-RAM (Conducting Bridge Random Access Memory) is expected as a candidate for a nonvolatile memory and a switch for the next generation. The similar switching phenomenon was observed in CB-RAM in which solid electrolyte materials were replaced with CMOS familiar metal oxides. However, elucidation of basic memory characteristics of metal-oxide-based CB-RAM is still an open issue. In this study, we evaluated electric characteristics and data retention characteristics of a Cu/HfO2/Pt structure. Bipolar-type resistive switching with operation voltages of 1 V, which gives an enough voltage margin to secure the stored data against noise, was confirmed. Data retention error was mainly caused by the change in stored resistance from low to high resistance. Therefore, it was suggested that rupture of a metal filament due to thermal diffusion of constituent metal atoms was the origin that caused the error. In addition, it was clarified that, in the low resistance state, memory cells with lower resistance (thicker filament) retain the data longer than those with higher resistances (thinner filament).
Keyword (in Japanese) (See Japanese page) 
(in English) CB-RAM / HfO2, / data retention / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 6, ICD2011-17, pp. 93-97, April 2011.
Paper # ICD2011-17 
Date of Issue 2011-04-11 (ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2011-17 Link to ES Tech. Rep. Archives: ICD2011-17

Conference Information
Committee ICD  
Conference Date 2011-04-18 - 2011-04-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kobe University Takigawa Memorial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2011-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Basic memory characteristics of HfO2-CB-RAM 
Sub Title (in English)  
Keyword(1) CB-RAM  
Keyword(2) HfO2,  
Keyword(3) data retention  
1st Author's Name Shigeyuki Tsuruta  
1st Author's Affiliation Tottori University (Tottori Univ.)
2nd Author's Name Kentaro Kinoshita  
2nd Author's Affiliation Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./ TEDREC)
3rd Author's Name Tatsuya Nakabayashi  
3rd Author's Affiliation Tottori University (Tottori Univ.)
4th Author's Name Satoru Kishida  
4th Author's Affiliation Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./ TEDREC)
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Date Time 2011-04-19 15:00:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-ICD2011-17 
Volume (vol) IEICE-111 
Number (no) no.6 
Page pp.93-97 
#Pages IEICE-5 
Date of Issue IEICE-ICD-2011-04-11 

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