Paper Abstract and Keywords |
Presentation |
2011-04-19 15:00
Basic memory characteristics of HfO2-CB-RAM Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) ICD2011-17 Link to ES Tech. Rep. Archives: ICD2011-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
CB-RAM (Conducting Bridge Random Access Memory) is expected as a candidate for a nonvolatile memory and a switch for the next generation. The similar switching phenomenon was observed in CB-RAM in which solid electrolyte materials were replaced with CMOS familiar metal oxides. However, elucidation of basic memory characteristics of metal-oxide-based CB-RAM is still an open issue. In this study, we evaluated electric characteristics and data retention characteristics of a Cu/HfO2/Pt structure. Bipolar-type resistive switching with operation voltages of 1 V, which gives an enough voltage margin to secure the stored data against noise, was confirmed. Data retention error was mainly caused by the change in stored resistance from low to high resistance. Therefore, it was suggested that rupture of a metal filament due to thermal diffusion of constituent metal atoms was the origin that caused the error. In addition, it was clarified that, in the low resistance state, memory cells with lower resistance (thicker filament) retain the data longer than those with higher resistances (thinner filament). |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CB-RAM / HfO2, / data retention / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 6, ICD2011-17, pp. 93-97, April 2011. |
Paper # |
ICD2011-17 |
Date of Issue |
2011-04-11 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ICD2011-17 Link to ES Tech. Rep. Archives: ICD2011-17 |
Conference Information |
Committee |
ICD |
Conference Date |
2011-04-18 - 2011-04-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kobe University Takigawa Memorial Hall |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Memory Device Technologies |
Paper Information |
Registration To |
ICD |
Conference Code |
2011-04-ICD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Basic memory characteristics of HfO2-CB-RAM |
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CB-RAM |
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HfO2, |
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data retention |
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1st Author's Name |
Shigeyuki Tsuruta |
1st Author's Affiliation |
Tottori University (Tottori Univ.) |
2nd Author's Name |
Kentaro Kinoshita |
2nd Author's Affiliation |
Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./ TEDREC) |
3rd Author's Name |
Tatsuya Nakabayashi |
3rd Author's Affiliation |
Tottori University (Tottori Univ.) |
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Satoru Kishida |
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Tottori University/Tottori University Electronic Display Research Center (Tottori Univ./ TEDREC) |
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Speaker |
Author-1 |
Date Time |
2011-04-19 15:00:00 |
Presentation Time |
25 minutes |
Registration for |
ICD |
Paper # |
ICD2011-17 |
Volume (vol) |
vol.111 |
Number (no) |
no.6 |
Page |
pp.93-97 |
#Pages |
5 |
Date of Issue |
2011-04-11 (ICD) |
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