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Paper Abstract and Keywords
Presentation 2011-03-04 14:25
Write Optimization for High-speed Non-volatile Memory Using Next State Function
Naoya Okada (Waseda Univ.), Yuichi Nakamura (NEC), Shinji Kimura (Waseda Univ.) VLD2010-144
Abstract (in Japanese) (See Japanese page) 
(in English) Non-volatile memory, such as MRAM and PCM, attracts attention for reducing power consumption. However, it consumes large write energy and has the limitation on the number of write operation. Therefore, it is desirable to reduce redundant writes for Non-volatile memory. In this manuscript, a detection method of redundant writes is proposed based on the next state function. If the next state does not depend on some current bit, the bit is redundant and unnecessary to write. Experiment results on ISCAS'89 benchmark circuits show that 0.45%~50.78% writes are redundant.
Keyword (in Japanese) (See Japanese page) 
(in English) state transition analysis / write reduction / high-speed non-volatile memory / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 432, VLD2010-144, pp. 165-170, March 2011.
Paper # VLD2010-144 
Date of Issue 2011-02-23 (VLD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee VLD  
Conference Date 2011-03-02 - 2011-03-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Danjo-Kyodo-Sankaku Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Technology for System-on-Silicon 
Paper Information
Registration To VLD 
Conference Code 2011-03-VLD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Write Optimization for High-speed Non-volatile Memory Using Next State Function 
Sub Title (in English)  
Keyword(1) state transition analysis  
Keyword(2) write reduction  
Keyword(3) high-speed non-volatile memory  
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1st Author's Name Naoya Okada  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Yuichi Nakamura  
2nd Author's Affiliation NEC Corporation (NEC)
3rd Author's Name Shinji Kimura  
3rd Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2011-03-04 14:25:00 
Presentation Time 25 minutes 
Registration for VLD 
Paper # VLD2010-144 
Volume (vol) vol.110 
Number (no) no.432 
Page pp.165-170 
#Pages
Date of Issue 2011-02-23 (VLD) 


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