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| Presentation | 2011-02-24 09:30 Fabrication of GaAs-based Nanowire CCD Controlled by Schottky Wrap Gates and Characterization of Its Charge Transfer Operation Yuki Nakano, Kensuke Miura, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST)  ED2010-200 SDM2010-235 Link to ES Tech. Rep. Archives: ED2010-200 SDM2010-235 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For synchronization of nanowire-based integrated circuits，a GaAs nanowire charge-coupled device (CCD) controlled by Schottky wrap gates is fabricated and its charge transfer operation is characterized．The charge packet is transferred successively by clocked signals on two wrap gates．Measured DC current in the fabricated device depends linearly on the clock frequency．The current is found to independent on temperature．The obtained results confirm synchronized charge transfer in the present device． | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaAs Nanowire / CCD / Charge Transfer / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 423, ED2010-200, pp. 49-52, Feb. 2011. | |
| Paper # | ED2010-200 | |
| Date of Issue | 2011-02-16 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-200 SDM2010-235 Link to ES Tech. Rep. Archives: ED2010-200 SDM2010-235 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2011-02-23 - 2011-02-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-02-SDM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of GaAs-based Nanowire CCD Controlled by Schottky Wrap Gates and Characterization of Its Charge Transfer Operation |
| Sub Title (in English) | |
| Keyword(1) | GaAs Nanowire |
| Keyword(2) | CCD |
| Keyword(3) | Charge Transfer |
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| 1st Author's Name | Yuki Nakano |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Kensuke Miura |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Yuta Shiratori |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Seiya Kasai |
| 4th Author's Affiliation | Hokkaido University/PRESTO JST (Hokkaido Univ./JST) |
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| Speaker | Author-1 |
| Date Time | 2011-02-24 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-200, SDM2010-235 |
| Volume (vol) | vol.110 |
| Number (no) | no.423(ED), no.424(SDM) |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2011-02-16 (ED, SDM) |
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