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Paper Abstract and Keywords
Presentation 2011-01-28 10:50
High-gain operation of avalanche photodiodes with InP/InGaAs new structures
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Satoshi Kodama (NTT) PN2010-44 OPE2010-157 LQE2010-142 Link to ES Tech. Rep. Archives: OPE2010-157 LQE2010-142
Abstract (in Japanese) (See Japanese page) 
(in English) Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside the device for highly reliable avalanche photodiodes (APDs).
To improve their reliability, several device structures with using selective diffusion or ion implantation techniques have been demonstrated. However, they make their fabrication processes complex.
This paper describes a new structure of APD that highly confines electric field inside the device, which is fabricated by simpler processes. Fabricated APD has comparable characteristics to the conventional APDs.
Keyword (in Japanese) (See Japanese page) 
(in English) Avalanche photodiode / guard-ring free / mesa structure / high-gain operation / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 395, OPE2010-157, pp. 103-106, Jan. 2011.
Paper # OPE2010-157 
Date of Issue 2011-01-20 (PN, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2010-44 OPE2010-157 LQE2010-142 Link to ES Tech. Rep. Archives: OPE2010-157 LQE2010-142

Conference Information
Committee OPE EMT LQE PN IEE-EMT  
Conference Date 2011-01-27 - 2011-01-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2011-01-OPE-EMT-LQE-PN-EMT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-gain operation of avalanche photodiodes with InP/InGaAs new structures 
Sub Title (in English)  
Keyword(1) Avalanche photodiode  
Keyword(2) guard-ring free  
Keyword(3) mesa structure  
Keyword(4) high-gain operation  
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1st Author's Name Masahiro Nada  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Yoshifumi Muramoto  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Haruki Yokoyama  
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
4th Author's Name Naoteru Shigekawa  
4th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
5th Author's Name Satoshi Kodama  
5th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
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Speaker
Date Time 2011-01-28 10:50:00 
Presentation Time 25 
Registration for OPE 
Paper # IEICE-PN2010-44,IEICE-OPE2010-157,IEICE-LQE2010-142 
Volume (vol) IEICE-110 
Number (no) no.394(PN), no.395(OPE), no.396(LQE) 
Page pp.103-106 
#Pages IEICE-4 
Date of Issue IEICE-PN-2011-01-20,IEICE-OPE-2011-01-20,IEICE-LQE-2011-01-20 


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