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| Presentation | 2011-01-14 09:30 Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.)  ED2010-182 MW2010-142 Link to ES Tech. Rep. Archives: ED2010-182 MW2010-142 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of AlGaN/GaN HEMTs. When the gate-bias stress under off state was applied to the additional gate between the main gate and the drain electrode, we observed a marked increase in on-resistance (RON). On the other hand, the off-state stress on the main gate itself caused decrease in drain saturation current as well as increase in RON. The calculation of electric field at the AlGaN surface showed that the field peaks existed at the gate edges on the drain and source sides, probably causing electron charging at the AlGaN surface in both gate-edge areas. These results indicated that the off-state gate stress induces “virtual gates” in the gate edges expanding both drain and source directions. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN / GaN / HEMT / current collapse / operation stability / dual-gate structure / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 358, ED2010-182, pp. 41-44, Jan. 2011. | |
| Paper # | ED2010-182 | |
| Date of Issue | 2011-01-06 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
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| Download PDF | ED2010-182 MW2010-142 Link to ES Tech. Rep. Archives: ED2010-182 MW2010-142 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2011-01-13 - 2011-01-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | current collapse |
| Keyword(5) | operation stability |
| Keyword(6) | dual-gate structure |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masafumi Tajima |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Tamotsu Hashizume |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-01-14 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-182, MW2010-142 |
| Volume (vol) | vol.110 |
| Number (no) | no.358(ED), no.359(MW) |
| Page | pp.41-44 |
| #Pages | 4 |
| Date of Issue | 2011-01-06 (ED, MW) |
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