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Paper Abstract and Keywords
Presentation 2010-12-17 11:10
Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating
Takahiko Shindo, Tadashi Okumura, Hitomi Ito, Takayuki Koguchi, Daisuke Takahashi, Yuki Atsumi, Joonhyun Kang, Ryo Osabe, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) Link to ES Tech. Rep. Archives: LQE2010-118
Abstract (in Japanese) (See Japanese page) 
(in English) The performance of LSI will hit performance ceiling by global wiring data capacity with technological progress like a signal delay or thermal problem. One of the promising candidates to solve this problem is replacing the electrical global wiring on chip by an optical interconnection. A semiconductor membrane laser, which consists of a high-ondex contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. We have introduced a lateral current injection (LCI) structure for electrical pumped membrane laser. In this paper, we tried to demonstrate LCI type DFB laser with surface grating structure. At first, we fabricated the LCI-DFB laser with etched GaInAsP surface grating, and realized the first single mode operation of LCI-DFB laser under Furthermore, we introduced a-Si surface grating structure in LCI laser and improved lasing characteristics. A low threshold current of 7.0 mA, and high differential quantum efficiency from a front facet of 43% were obtained under a room-temperature continuous-wave condition.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor membrane laser / Lateral current injection / Strong optical confinement / Surface grating / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 353, LQE2010-118, pp. 17-22, Dec. 2010.
Paper # LQE2010-118 
Date of Issue 2010-12-10 (LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee LQE  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2010-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lateral Current Injection 1550nm Wavelength DFB Laser with a-Si Surface Grating 
Sub Title (in English)  
Keyword(1) Semiconductor membrane laser  
Keyword(2) Lateral current injection  
Keyword(3) Strong optical confinement  
Keyword(4) Surface grating  
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1st Author's Name Takahiko Shindo  
1st Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
2nd Author's Name Tadashi Okumura  
2nd Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
3rd Author's Name Hitomi Ito  
3rd Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
4th Author's Name Takayuki Koguchi  
4th Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
5th Author's Name Daisuke Takahashi  
5th Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
6th Author's Name Yuki Atsumi  
6th Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
7th Author's Name Joonhyun Kang  
7th Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
8th Author's Name Ryo Osabe  
8th Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
9th Author's Name Tomohiro Amemiya  
9th Author's Affiliation Tokyo Institute of Technology Quantum Nanoelectronics Research Center (Tokyo Tech)
10th Author's Name Nobuhiko Nishiyama  
10th Author's Affiliation Tokyo Institute of Technology Department of Electrical and Electronic Engineering (Tokyo Tech)
11th Author's Name Shigehisa Arai  
11th Author's Affiliation Tokyo Institute of Technology Quantum Nanoelectronics Research Center (Tokyo Tech)
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Speaker
Date Time 2010-12-17 11:10:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-LQE2010-118 
Volume (vol) IEICE-110 
Number (no) no.353 
Page pp.17-22 
#Pages IEICE-6 
Date of Issue IEICE-LQE-2010-12-10 


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