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Paper Abstract and Keywords
Presentation 2010-12-17 11:40
Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cell Process
Tomohiro Funatani, Kenji Hirata, Tamaki Takayama, Mitsuhiro Hasegawa, Takashi Fuyuki (NAIST) SDM2010-190 Link to ES Tech. Rep. Archives: SDM2010-190
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents influence of dopant precursor layer in Laser Doping (LD) for silicon solar cells. Recently,reducing costs and high-efficiency technology of crystalline silicon solar cells is important.LD process permit these tasks. The purpose of this research is to analyze physical properties of PSG made by sputtering method and doping properties after LD. We also analyzed surface of substrate after laser irradiation,the dependence of PSG thickness for surface,dopant depth and concentration after LD.
Keyword (in Japanese) (See Japanese page) 
(in English) Laser Doping / Solar Cells / Phosphorus Silicate Glass (PSG) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-190, pp. 29-32, Dec. 2010.
Paper # SDM2010-190 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-190 Link to ES Tech. Rep. Archives: SDM2010-190

Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cell Process 
Sub Title (in English)  
Keyword(1) Laser Doping  
Keyword(2) Solar Cells  
Keyword(3) Phosphorus Silicate Glass (PSG)  
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1st Author's Name Tomohiro Funatani  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Kenji Hirata  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Tamaki Takayama  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Mitsuhiro Hasegawa  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takashi Fuyuki  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2010-12-17 11:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-190 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.29-32 
#Pages
Date of Issue 2010-12-10 (SDM) 


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