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| Presentation | 2010-12-17 17:15 AlGaN semiconductor lasers for short ultraviolet region Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics)  LQE2010-128 Link to ES Tech. Rep. Archives: LQE2010-128 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have demonstrated the room-temperature operations of AlGaN based laser diodes under pulsed-current mode. AlGaN laser diodes have been fabricated on the low dislocation density AlGaN films. The laser diodes lased at a peak wavelength down to 336 nm far beyond the GaN band gap. The optical and temperature characteristics as well as the carrier recombination of the devices have been investigated. The results on the AlGaN based laser diodes grown on the high quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelength. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlGaN / ultraviolet / laser diodes / semiconductor lasers / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 353, LQE2010-128, pp. 63-67, Dec. 2010. | |
| Paper # | LQE2010-128 | |
| Date of Issue | 2010-12-10 (LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | LQE2010-128 Link to ES Tech. Rep. Archives: LQE2010-128 |
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| Conference Information | |
| Committee | LQE |
| Conference Date | 2010-12-17 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2010-12-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN semiconductor lasers for short ultraviolet region |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | ultraviolet |
| Keyword(4) | laser diodes |
| Keyword(5) | semiconductor lasers |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Harumasa Yoshida |
| 1st Author's Affiliation | Hamamatsu Photonics K.K. (Hamamatsu Photonics) |
| 2nd Author's Name | Masakazu Kuwabara |
| 2nd Author's Affiliation | Hamamatsu Photonics K.K. (Hamamatsu Photonics) |
| 3rd Author's Name | Yoji Yamashita |
| 3rd Author's Affiliation | Hamamatsu Photonics K.K. (Hamamatsu Photonics) |
| 4th Author's Name | Kazuya Uchiyama |
| 4th Author's Affiliation | Hamamatsu Photonics K.K. (Hamamatsu Photonics) |
| 5th Author's Name | Hirofumi Kan |
| 5th Author's Affiliation | Hamamatsu Photonics K.K. (Hamamatsu Photonics) |
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| Speaker | Author-1 |
| Date Time | 2010-12-17 17:15:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | LQE2010-128 |
| Volume (vol) | vol.110 |
| Number (no) | no.353 |
| Page | pp.63-67 |
| #Pages | 5 |
| Date of Issue | 2010-12-10 (LQE) |
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