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| Presentation | 2010-12-17 16:45 Study for DNA-Field Effect Transistor with Si gate Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Kenji Sakamoto, Shin Yokoyama (Hiroshima Univ)  SDM2010-201 Link to ES Tech. Rep. Archives: SDM2010-201 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The conduction of DNA molecules which are fixed to neighboring Si electrodes and the electrical properties of DNA transistor with three terminals, one of which is n- Si substrate as gate electrode, are examined. The carrier conduction in the DNA molecules is confirmed only for the sample where the both ends of DNA are fixed to the neighboring Si electrodes. Although it is not clear that the conduction mechanism is either the band conduction or hopping conduction, the conduction is due to the carrier flowing through the DNA. For the electrical properties of the transistor, it was found that hole conduction occurs and the current saturation with applied voltage to the neighboring Si electrodes is observed under the constant gate voltage. The origin of the hole is the minority carrier in n- Si electrode. For the DNA transistor, the control of the drain currents by the gate voltage is successfully achieved for the first time. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | DNA / Transistor / Si / hole conduction / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 351, SDM2010-201, pp. 87-91, Dec. 2010. | |
| Paper # | SDM2010-201 | |
| Date of Issue | 2010-12-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-201 Link to ES Tech. Rep. Archives: SDM2010-201 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-12-17 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study for DNA-Field Effect Transistor with Si gate |
| Sub Title (in English) | |
| Keyword(1) | DNA |
| Keyword(2) | Transistor |
| Keyword(3) | Si |
| Keyword(4) | hole conduction |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shogo Takagi |
| 1st Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 2nd Author's Name | Naoto Matsuo |
| 2nd Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 3rd Author's Name | Kazushige Yamana |
| 3rd Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 4th Author's Name | Akira Heya |
| 4th Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 5th Author's Name | Tadao Takada |
| 5th Author's Affiliation | University of Hyogo (Univ of Hyogo) |
| 6th Author's Name | Kenji Sakamoto |
| 6th Author's Affiliation | Hiroshima University (Hiroshima Univ) |
| 7th Author's Name | Shin Yokoyama |
| 7th Author's Affiliation | Hiroshima University (Hiroshima Univ) |
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| Speaker | Author-1 |
| Date Time | 2010-12-17 16:45:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2010-201 |
| Volume (vol) | vol.110 |
| Number (no) | no.351 |
| Page | pp.87-91 |
| #Pages | 5 |
| Date of Issue | 2010-12-10 (SDM) |
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