Paper Abstract and Keywords |
Presentation |
2010-12-17 10:00
Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185 Link to ES Tech. Rep. Archives: SDM2010-185 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cross-sectional size, defined by the square root of the cross-sectional area of Si NWs, was changed from 18 nm to 4 nm. Both n- and p-channel MOSFETs have shown a nearly ideal subthreshold swing of 63 mV/decade. The threshold voltage of n-/p-channel MOSFETs has gradually increased/decreased with decreasing the cross-sectional size. The bandgap change has been derived from the threshold-voltage shift. The bandgap of Si NWs was calculated based on three theories: a density functional theory, tight binding method, and effective mass approximation. The calculated bandgaps show good agreement with those derived from threshold voltage. The theoretical calculation indicates that the bandgap is dominated by the cross-sectional size (area) and is not very sensitive to the shape within the aspect-ratio range of 1.0 to 2.5. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Bandgap / Silicon / Nanowire / Threshold voltage / MOSFET / Density functional theory / Tight binding method / Effective mass approximation |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 351, SDM2010-185, pp. 1-6, Dec. 2010. |
Paper # |
SDM2010-185 |
Date of Issue |
2010-12-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2010-185 Link to ES Tech. Rep. Archives: SDM2010-185 |
Conference Information |
Committee |
SDM |
Conference Date |
2010-12-17 - 2010-12-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto Univ. (Katsura) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication and Characterization of Si and Si-related Materials |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations |
Sub Title (in English) |
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Keyword(1) |
Bandgap |
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Silicon |
Keyword(3) |
Nanowire |
Keyword(4) |
Threshold voltage |
Keyword(5) |
MOSFET |
Keyword(6) |
Density functional theory |
Keyword(7) |
Tight binding method |
Keyword(8) |
Effective mass approximation |
1st Author's Name |
Hironori Yoshioka |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Naoya Morioka |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Jun Suda |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Tsunenobu Kimoto |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-12-17 10:00:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2010-185 |
Volume (vol) |
vol.110 |
Number (no) |
no.351 |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2010-12-10 (SDM) |