IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-12-17 10:00
Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185 Link to ES Tech. Rep. Archives: SDM2010-185
Abstract (in Japanese) (See Japanese page) 
(in English) Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cross-sectional size, defined by the square root of the cross-sectional area of Si NWs, was changed from 18 nm to 4 nm. Both n- and p-channel MOSFETs have shown a nearly ideal subthreshold swing of 63 mV/decade. The threshold voltage of n-/p-channel MOSFETs has gradually increased/decreased with decreasing the cross-sectional size. The bandgap change has been derived from the threshold-voltage shift. The bandgap of Si NWs was calculated based on three theories: a density functional theory, tight binding method, and effective mass approximation. The calculated bandgaps show good agreement with those derived from threshold voltage. The theoretical calculation indicates that the bandgap is dominated by the cross-sectional size (area) and is not very sensitive to the shape within the aspect-ratio range of 1.0 to 2.5.
Keyword (in Japanese) (See Japanese page) 
(in English) Bandgap / Silicon / Nanowire / Threshold voltage / MOSFET / Density functional theory / Tight binding method / Effective mass approximation  
Reference Info. IEICE Tech. Rep., vol. 110, no. 351, SDM2010-185, pp. 1-6, Dec. 2010.
Paper # SDM2010-185 
Date of Issue 2010-12-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-185 Link to ES Tech. Rep. Archives: SDM2010-185

Conference Information
Committee SDM  
Conference Date 2010-12-17 - 2010-12-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. (Katsura) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials 
Paper Information
Registration To SDM 
Conference Code 2010-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations 
Sub Title (in English)  
Keyword(1) Bandgap  
Keyword(2) Silicon  
Keyword(3) Nanowire  
Keyword(4) Threshold voltage  
Keyword(5) MOSFET  
Keyword(6) Density functional theory  
Keyword(7) Tight binding method  
Keyword(8) Effective mass approximation  
1st Author's Name Hironori Yoshioka  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Naoya Morioka  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Jun Suda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Tsunenobu Kimoto  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2010-12-17 10:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-185 
Volume (vol) vol.110 
Number (no) no.351 
Page pp.1-6 
#Pages
Date of Issue 2010-12-10 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan