Paper Abstract and Keywords |
Presentation |
2010-12-17 10:55
Development of Procedure for Modeling MOSFET Compatible with ITRS
-- Noise and I-V Characteristics Modeling for RF/Analog MOSFET -- Sin-Nyoung Kim, Akira Tsuchiya, Hidetoshi Onodera (Kyoto Univ.) ICD2010-119 Link to ES Tech. Rep. Archives: ICD2010-119 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A procedure for modeling MOSFET compatible with ITRS is proposed. Compared to the PTM, this work focuses on how to generate the predictive MOSFET model cards.
Achieving the predictive MOSFET model cards from digital to RF/analog circuit design, this procedure facilitates early design research and supports joint technology-design exploration for optimal nanoscale integration. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Predictive model / Procedure for modeling / Model card generation / RF/analog MOSFET / Intermediate model / Compatibility with ITRS / Prediction of noise / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 344, ICD2010-119, pp. 119-123, Dec. 2010. |
Paper # |
ICD2010-119 |
Date of Issue |
2010-12-09 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2010-119 Link to ES Tech. Rep. Archives: ICD2010-119 |
Conference Information |
Committee |
ICD |
Conference Date |
2010-12-16 - 2010-12-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
RCAST, Univ. of Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Workshop for Graduate Student and Young Researchers |
Paper Information |
Registration To |
ICD |
Conference Code |
2010-12-ICD |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Development of Procedure for Modeling MOSFET Compatible with ITRS |
Sub Title (in English) |
Noise and I-V Characteristics Modeling for RF/Analog MOSFET |
Keyword(1) |
Predictive model |
Keyword(2) |
Procedure for modeling |
Keyword(3) |
Model card generation |
Keyword(4) |
RF/analog MOSFET |
Keyword(5) |
Intermediate model |
Keyword(6) |
Compatibility with ITRS |
Keyword(7) |
Prediction of noise |
Keyword(8) |
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1st Author's Name |
Sin-Nyoung Kim |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Akira Tsuchiya |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Hidetoshi Onodera |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-12-17 10:55:00 |
Presentation Time |
25 minutes |
Registration for |
ICD |
Paper # |
ICD2010-119 |
Volume (vol) |
vol.110 |
Number (no) |
no.344 |
Page |
pp.119-123 |
#Pages |
5 |
Date of Issue |
2010-12-09 (ICD) |