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| Presentation | 2010-12-17 16:05 Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate Yasunori Okabe, Kenji Kondo (Tohoku Gakuin Univ.), Kenta Hirose, Junki Suzuki, Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.)  SDM2010-199 Link to ES Tech. Rep. Archives: SDM2010-199 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | It is recognized that field-effect mobility of TFTs increases with grain size. We reported previously that it is possible to fabricate lateral large-grained poly-Si1-xGex films by continuous wave (cw) laser lateral crystallization using amorphous Si1-xGex as the precursor. The melting temperature of Si1-xGex films is lower than that of Si films. Therefore, the application of lateral large-grained poly-Si1-xGex films to TFTs on glass substrates will yield high-performance TFTs and reduce the thermal damage to the substrates. In this study, we fabricated poly-Si0.95Ge0.05 TFTs on glass substrates at a low process temperature of 550°C and obtained n-channel field-effect mobility of 145 cm2/Vs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si1-xGex / Thin Film Transistors / TFT / Polycrystalline film / solar cell / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 351, SDM2010-199, pp. 79-82, Dec. 2010. | |
| Paper # | SDM2010-199 | |
| Date of Issue | 2010-12-10 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-199 Link to ES Tech. Rep. Archives: SDM2010-199 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-12-17 - 2010-12-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto Univ. (Katsura) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate |
| Sub Title (in English) | |
| Keyword(1) | Si1-xGex |
| Keyword(2) | Thin Film Transistors |
| Keyword(3) | TFT |
| Keyword(4) | Polycrystalline film |
| Keyword(5) | solar cell |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasunori Okabe |
| 1st Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
| 2nd Author's Name | Kenji Kondo |
| 2nd Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
| 3rd Author's Name | Kenta Hirose |
| 3rd Author's Affiliation | Shimane University (Shimane Univ.) |
| 4th Author's Name | Junki Suzuki |
| 4th Author's Affiliation | Shimane University (Shimane Univ.) |
| 5th Author's Name | Kuninori Kitahara |
| 5th Author's Affiliation | Shimane University (Shimane Univ.) |
| 6th Author's Name | Akito Hara |
| 6th Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-12-17 16:05:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2010-199 |
| Volume (vol) | vol.110 |
| Number (no) | no.351 |
| Page | pp.79-82 |
| #Pages | 4 |
| Date of Issue | 2010-12-10 (SDM) |
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